1959
DOI: 10.1107/s0365110x59002602
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Rare earth radii in the iron garnets

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Cited by 23 publications
(16 citation statements)
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“…400 Most notably, however, AgBiS 2 has seen a massive stride in photovoltaic efficiency very recently, much more so than its copper analogues. Also unlike CuBiS 2 , nanocrystalline-and high temperature bulk-AgBiS 2 occupies a 3D cubic disordered rocksalt structure, 401,402 which has seen previous interest due to its high temperature order-disorder transition and its effect on thermoelectric behaviour. 403,404 While the bulk has been recorded to have an optical band gap of 0.9 eV, 405 strong quantum confinement effects have meant that quantum dot thin-films have band gaps reported at 1.0-1.3 eV, although with one study reporting 2.67 eV; that study also reports a very strong absorption coefficient above 10 5 for low frequencies.…”
Section: Noble Metal Bismuth Chalcogenides and Halidesmentioning
confidence: 99%
“…400 Most notably, however, AgBiS 2 has seen a massive stride in photovoltaic efficiency very recently, much more so than its copper analogues. Also unlike CuBiS 2 , nanocrystalline-and high temperature bulk-AgBiS 2 occupies a 3D cubic disordered rocksalt structure, 401,402 which has seen previous interest due to its high temperature order-disorder transition and its effect on thermoelectric behaviour. 403,404 While the bulk has been recorded to have an optical band gap of 0.9 eV, 405 strong quantum confinement effects have meant that quantum dot thin-films have band gaps reported at 1.0-1.3 eV, although with one study reporting 2.67 eV; that study also reports a very strong absorption coefficient above 10 5 for low frequencies.…”
Section: Noble Metal Bismuth Chalcogenides and Halidesmentioning
confidence: 99%
“…In AgSbTe 2 , on the other hand, Ag and Sb are randomly disordered. The extremely low thermal conductivity of LiPbSb 3 S 6 appears to be similar in origin to AgSbTe 2 and likely results from the inherent Li/Sb and Li/Pb disorder in the metal sites of the structure. ,, …”
mentioning
confidence: 92%
“…AgBiS 2 , a member of the I−V−VI 2 family, is a polymorphic semiconductor and shows structural phase transition as a function of the temperature. 22,28 In the bulk phase, AgBiS 2 crystallizes in a trigonal crystal structure (space group, P3̅ m1) at room temperature, which transforms to a cation disordered rock salt structure (space group, Fm3̅ m) at ∼473 K. 22,28 Previously, we demonstrated that the high-temperature cubic phase of AgBiS 2 was stabilized in the form of nanocrystals with ordered structure at room temperature by the solution-based kinetically controlled synthesis. 22 We observed the existence of an unforeseen order−disorder transition with an anomalous change in thermopower at ∼610 K in these nanocrystals.…”
Section: ■ Introductionmentioning
confidence: 99%