Rare Earth Photoluminescence in Bismuth-Germanate Crystals

Arslanlar, Y. Tuncer; Kotan, Z.; Kibar, R.; Canımoğlu, A.; Can, N.

doi:10.1080/00387010.2013.771370

Cited by 6 publications

(5 citation statements)

References 30 publications

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“…38 It is known as scintillator material anddue to the VI Bi 3+ -siteis an excellent host for optically active dopants. 38,39 Fig. 2 exemplarily shows DR spectra of blank Zn 2 GeO 4 and Bi 3+ (x ¼ 0.02) singly-doped Zn 2 GeO 4 .…”

Section: Methodsmentioning

confidence: 99%

Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄

2014

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Section: Methodsmentioning

confidence: 99%

Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄

2014

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“…(37) Additionally, sharp emission peaks were confirmed at 480 and 800 nm. They were respectively considered to be derived from the 1 G 4 -3 H 6 and 3 H 4 -3 H 6 transitions of Tm 3+ (37,38) through energy transfer from Bi 3+ to Tm 3+ since the excitation wavelength (280 nm) corresponded to the 1 S 0 -3 P 1 transition of Bi 3+ . (39) Emission at 800 nm due to Tm 3+ was observed under excitation at 680 nm.…”

Section: Resultsmentioning

confidence: 99%

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Okazaki¹,

Nakauchi²,

Fukushima³

et al. 2023

Sensors and Materials

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We grew 0.1, 0.5, and 1% Tm-doped Bi 4 Ge 3 O 12 single crystals by the floating zone method. Their photoluminescence and scintillation properties were investigated in the range from visible to near-IR. Luminescence spectra and decay times consistent with the transitions of Tm 3+ were confirmed. X-ray-irradiated dose rate response properties were evaluated using the prepared samples and an InGaAs photodiode. The 1% Tm-doped sample showed the widest dynamic range (0.03-60 Gy/h) among the prepared samples.

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“…To substitute the REE atom at the Bi site, we considered all the non-equivalent Bi sites and proceeded with our calculation with the the most stable site for doping. For our investigation, we considered REE = Ce, Pr, Nd, and Tm as dopant elements;all considered in previous experimental studies 22 , 24 . The REE atoms are considered to replace Bi atom culminating in a REE/Bi ratio of 1/64 in the supercell.…”

Section: Resultsmentioning

confidence: 99%

“…Different REE dopants have been reported to improve scintillation performance 12 , 22 . For instance, it has been show that the radiation resistance of BGO crystal was improved by Eu doping leading to faster induced absorption recovery 24 . In the same vein, Ce doping has been found to lead to occurrence of thermo-luminescence (TSL) peaks around room temperature (RT) 25 .…”

Section: Introductionmentioning

confidence: 99%

First-principles studies of defect behaviour in bismuth germanate

Akande

Bouhali

2022

Sci Rep

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Intrinsic defects are known to greatly affect the structural and electronic properties of scintillators thereby impacting performance when these materials are in operation. In order to overcome this effect, an understanding of the defect process is required for the design of more stable materials. Here we employed density functional theory calculations and the PBE0 hybrid functional to study the structural, electronic,defect process and optical properties of $$\hbox {Bi}_4\hbox {Ge}_3\hbox {O}_{{12}}$$ Bi 4 Ge 3 O 12 (BGO), a well know material used as scintillator. We examined possible intrinsic defects and calculated their formation energy and their impact on the properties that affect the scintillation process. Furthermore, we investigated the effect and role of rare earth element (REE = Nd, Pr, Ce and Tm) doping on the properties of the BGO system. While the PBE functional underestimated the band gap, the PBE0 was found to adequately describe the electronic properties of the system. Out of all the defects types considered, it was found that $$\hbox {Bi}_{{Ge}}$$ Bi Ge antisite is the most favourable defect. Analysis of the effect of this defect on the electronic properties of BGO revealed an opening of ingap states within the valence band. This observation suggests that the $$\hbox {Bi}^{3+}$$ Bi 3 + could be a charge trapping defect in BGO. We found that the calculated dopant substitution formation energy increases with increase in the size of the dopant and it turns out that the formation of O vacancy is easier in doped systems irrespective of the size of the dopant. We analyzed the optical spectra and noted variations in different regions of the photon energy spectra.

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Rare Earth Photoluminescence in Bismuth-Germanate Crystals

Cited by 6 publications

References 30 publications

Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄

Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

First-principles studies of defect behaviour in bismuth germanate

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Rare Earth Photoluminescence in Bismuth-Germanate Crystals

Cited by 6 publications

References 30 publications

Spectral shifting and NIR down-conversion in Bi3+/Yb3+ co-doped Zn2GeO4

Spectral shifting and NIR down-conversion in Bi3+/Yb3+ co-doped Zn2GeO4

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

First-principles studies of defect behaviour in bismuth germanate

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Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄

Spectral shifting and NIR down-conversion in Bi³⁺/Yb³⁺ co-doped Zn₂GeO₄