Rare Earth Nickel Oxides

Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3

“…It is well approximated by a pseudocubic cell with a = 3.84 Å. 12 The LaNiO 3 films thus experience tensile strain when grown on SrTiO 3 ͑a = b = 3.905 Å͒ due the 1.7% lattice mismatch between the two materials. The growth of LaNiO 3 thin films onto ͑001͒ insulating SrTiO 3 substrates was carried out by off-axis rf magnetron sputtering in 0.180 mbar of an oxygen/argon mixture of ratio 1:3 at a substrate temperature of 510°C.…”

Mossbauer Investigation of 57Fe-Doped Ni(III) Perovskites ANi0.98Fe0.02O3 (A=Pr, Nd, Sm, Y, Lu, Tl) versus Temperature

“…It has been showed that in the insulating regime (ToT IM ) the above perovskites contain two chemically different Ni (1) and Ni(2) cations. The significantly different mean Ni-O bond distances observed for Ni (1) 57 Fe metal and citric acid were dissolved in dilute nitric acid. The solution was evaporated with keeping its pH 5-6 until a blue gel was obtained.…”

Microstructures of lanthanum nickel oxide particles with crystal facets synthesized in molten chlorides

“…4) LaNiO 3 is known to have rhombohedrally distorted perovskite structure, and the lattice parameters of the rhombohedral unit cell and the pseudocubic unit cell are a = 5.46 ¡ and ¢ = 60.8 o and a = 3.84 ¡, respectively. 4), 5) Since the lattice constant of LaNiO 3 is close to that of the important perovskite ferroelectric materials such as lead zirconium titanate (PZT), LaNiO 3 is one of the promising candidates of the oxide electrodes for thin-film ferroelectric devices. Moreover, it was demonstrated that the orientation of the ferroelectric thin films is influenced by the orientation of the bottom electrodes, and thereby the electrical properties, especially the fatigue properties, of these thin-film ferroelectrics could be significantly improved by modifying the microstructure of the LaNiO 3 buffer layer.…”