Rare Earth Elements and Tellurium

Hinz, Ingeborg; Kühn, Peter; Vetter, Ursula; Warkentin, Eberhard; Bergmann, Hartmut; Hein, Hiltrud

doi:10.1007/978-3-662-06366-8_1

Cited by 3 publications

(2 citation statements)

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“…The observed paramagnetic behaviour of the Dy doping series can be attributed to the strongly localised 4f electrons in Dy which have only a small overlap with the wave functions of neighbouring atoms and therefore show no, or only weak, direct interactions. This behaviour is well-known for the dysprosium-tellurium compounds DyTe, Dy 3 Te 4 , Dy 4 Te 7 , Dy 4 Te 9 , and Dy 4 Te 11 [44], whereas Dy 2 Te 3 is known to be antiferromagnetic with a Néel temperature of 4.1 K [45]. Magnetic ordering in rare earth elements typically occurs through an indirect exchange or Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction involving the conduction electrons [26].…”

Section: Bulk Magnetisation Measurementsmentioning

confidence: 88%

Study of Dy-doped Bi₂Te₃: thin film growth and magnetic properties

Harrison

Collins-McIntyre

Zhang

et al. 2015

J. Phys.: Condens. Matter

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Abstract. Breaking the time-reversal symmetry (TRS) in topological insulators (TIs) through ferromagnetic doping is an essential prerequisite for unlocking novel physical phenomena and exploring potential device applications. Here, we report the successful growth of high-quality (Dy x Bi 1−x ) 2 Te 3 thin films with Dy concentrations up to x = 0.355 by molecular beam epitaxy. Bulk-sensitive magnetisation studies using superconducting quantum interference device magnetometry find paramagnetic behaviour down to 2 K for the entire doping series. The effective magnetic moment, µ eff , is strongly doping concentration-dependent and reduces from ∼12.6 µ B /Dy for x = 0.023 to ∼4.3 µ B /Dy for x = 0.355. X-ray absorption spectra and x-ray magnetic circular dichroism (XMCD) at the Dy M 4,5 edge are employed to provide a deeper insight into the magnetic nature of the Dy 3+ -doped films. XMCD, measured in surfacesensitive total-electron-yield detection, gives µ eff = 4.2 µ B /Dy. The large measured moments make Dy-doped films interesting TI systems in which the TRS may be broken via the proximity effect due to an adjacent ferromagnetic insulator.

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Section: Bulk Magnetisation Measurementsmentioning

confidence: 88%

Study of Dy-doped Bi₂Te₃: thin film growth and magnetic properties

Harrison

Collins-McIntyre

Zhang

et al. 2015

J. Phys.: Condens. Matter

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“…By definition, compounds on the convex hull are stable with respect to decomposition to competing phases (at least for some range of chemical potentials), while if the compound is above the convex hull, it tends to decompose. As one can see, LaTe (Fm3̅ m), 34 LaTe 2 (Pma2), 35,36 La 3 Te 4 (I4̅ 3d), 15 La 2 Te 5 (Cmcm), 34 and LaTe 3 (Cmcm) 34 reside on the energy convex hull. All of these compounds are widely synthesizable materials with distinct synthesis procedures that are well documented even in ICSD.…”

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confidence: 97%

Fermi-Level Instability as a Way to Tailor the Properties of La₃Te₄

Khan¹,

Gopidi²,

Wlazło³

et al. 2023

J. Phys. Chem. Lett.

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Traditionally, the formation of off-stoichiometric compounds is believed to be the growth effect rather than the intrinsic tendency of the system. However, here, using the example of La 3 Te 4 , we demonstrate that in n-type gapped metals having a large internal gap between principal band edges and the Fermi level inside of the principal conduction band, Fermi-level instability can develop, resulting in a decrease in the formation energy for acceptor defects. Specifically, La vacancies in La 3 Te 4 form spontaneously to produce the acceptor states and remove a fraction of free carriers from the principal conduction band via electron−hole recombination. Such a unique self-doping mechanism allows stabilization of a range of off-stoichiometric La 3−x Te 4 compounds, which have different electronic properties. Moreover, we thus show how controlling synthesis conditions can be used as a knob to reach the target functionality, including the controllable metal-to-insulator transition.

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