Rare-earth defects in GaN: A systematic investigation of the lanthanide series
Khang Hoang
Abstract:Rare-earth (RE) doped GaN is of interest for optoelectronics and spintronics and potentially for quantum applications. A fundamental understanding of the interaction between RE dopants and the semiconductor host is key to realizing the material's full potential. This work reports an investigation of lanthanide (Ln) defects in GaN using hybrid density-functional defect calculations. We find that all the Ln dopants incorporated at the Ga lattice site, LnGa (Ln = La-Lu), are stable as trivalent ions, but Eu and Y… Show more
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