2011
DOI: 10.1088/0957-4484/22/27/275306
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Rapid turnaround scanning probe nanolithography

Abstract: Scanning probe nanolithography (SPL) has demonstrated its potential in a variety of applications like 3D nanopatterning, 'direct development' lithography, dip-pen deposition or patterning of self-assembled monolayers. One of the main issues holding back SPL has been the limited throughput for patterning and imaging. Here we present a complete lithography and metrology system based on thermomechanical writing into organic resists. Metrology is carried out using a thermoelectric topography sensing method. More s… Show more

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Cited by 78 publications
(66 citation statements)
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“…3b contain 880 x 880 pixels and were written in less than 12 s, demonstrating the high throughput of the approach. 29 Throughputs are in the range of 5 x 10 4 µm 2 /h ( Fig. 2b).…”
Section: Thermal and Thermochemical Splmentioning
confidence: 95%
“…3b contain 880 x 880 pixels and were written in less than 12 s, demonstrating the high throughput of the approach. 29 Throughputs are in the range of 5 x 10 4 µm 2 /h ( Fig. 2b).…”
Section: Thermal and Thermochemical Splmentioning
confidence: 95%
“…49 The current state-ofthe-art in micro-and nanofabrication technology allows the construction of nanodevices in very small dimensions and the creation of different topologies. [50][51][52][53][54][55][56][57][58][59] Multitudes of techniques are now used for the construction process, although the field has not yet reached sufficient maturity. Commonly used methods require modification of a substrate via several processes such as thin film deposition (an additive process to the substrate), pattern transfer lithography (also an additive process to the substrate), selective etching (an ''erosive'' process of the substrate) and injection-moulding (which can be applied onto silicon, glass or polymer substrates).…”
Section: Major Requirements Of Novel Biomaterialsmentioning
confidence: 99%
“…The unique capabilities of t-SPL are: (i) high-resolution patterning of complex geometries without wet development and proximity correction, (ii) in-situ imaging with the same tip before or after the patterning [132,133], (iii) 3D patterning with ~1 nm vertical accuracy, (iv) overlay with high accuracy relative to structures buried under the resist [133], and (v) no damage of sensitive materials as in a charged particle beam. Particularly, the non-damaging character of the substrate, its CMOS compatibility, and 3D nanoscale capability makes t-SPL technique a promising approach for future nanotechnology and electronic applications.…”
Section: Tip Nano-writingmentioning
confidence: 99%