We have shown the possibility to obtain M-type barium hexaferrite thin films with thickness of *200-450 nm on the surface of dielectric a-Al 2 O 3 substrates with low microwave dielectric loss (tan d * 10 -4 GHz) by a sol-gel method. For the production of high-dense homogeneous thin films of M-type barium hexaferrite (BaFe 12 O 19 , BHF) with nanorod-like grains and a uniform distribution of iron and barium ions, we have studied the synthesis conditions for thermally stable filmforming solutions with high concentrations of barium ions. Films with a c-axis magnetic texture were obtained by spin-coating the former solutions on a-Al 2 O 3 substrates and annealing at temperatures between 473 and 1073 K. The resulting textured M-type BHF films have demonstrated the following magnetic parameters: H c\ = 334 kA/ m, H c|| = 167 kA/m; M s\ = 0.005 emu, M s|| = 0.003 emu for the films' thickness of *200 nm, and H c\ = 360 kA/ m, H c|| = 338 kA/m; M s\ = 0.009 emu, M s|| = 0.007 emu for the films' thickness of *450 nm. These M-type BHF thin films can serve as a promising basis for further development of multilayer microwave resonant elements.
Graphical Abstract