Abstract:A cold-wall rapid thermal processor is used for the oxidation of commensurately grown GexSi1−x layers on Si substrates. It is shown for dry oxidation that the oxidation rate of GeSi is the same as that of Si. The dry oxidationrate of GeSi is independent of Ge concentration (up to 20 % considered in this study) in the GeSi layer. For wet oxidation, however, the rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the Ge concentra… Show more
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