Rapid Thermal Annealing - Theory and Practice

Hill, Chris; Jones, S. K.; Boys, Donald W.

doi:10.1007/978-1-4613-0541-5_4

Cited by 37 publications

(22 citation statements)

References 5 publications

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“…Any process that involves fast heating and cooling rates could be placed in this category. Review papers [14][15][16] described the advantages of isothermal heating (lamp, resistance, and e-beam heating, 1-100 s processing time) over thermal flux (scanned continuous wave (cw) laser, e-beam, 0.1-10 ms processing time) and adiabatic heating (pulsed beam or laser, 1-1000 ns processing time) to semiconductor manufacturing [17,18]. However, the demands of RTP systems for material modification are quite different from those used in microelectronics applications.…”

Section: The Rtp Techniquementioning

confidence: 99%

High-energy density beams and plasmas for micro- and nano-texturing of surfaces by rapid melting and solidification

Surla¹,

Ruzic²

2011

J. Phys. D: Appl. Phys.

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Several advances in materials research have been made due to the wide array of tools currently available for the processing of materials: plasmas, electron beams, ion beams and lasers. The area of material science is fortunate to have seen the development of these tools over the years, be it for new bulk materials, coatings or for surface modification. Several applications have benefited and many more will in the future as the properties of the materials are altered on a micro/nanoscale. Currently, several techniques exist to modify the physical, chemical and biological properties of the material surface; however, this review limits itself to surface modification applications using the rapid thermal processing (RTP) technique. First, a brief overview of the existing surface modification methods using the principles of RTP is reviewed, and then a novel method to create micro/nanostructures on the surface using pulsed plasma exposure of materials is presented.

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Section: The Rtp Techniquementioning

confidence: 99%

High-energy density beams and plasmas for micro- and nano-texturing of surfaces by rapid melting and solidification

Surla¹,

Ruzic²

2011

J. Phys. D: Appl. Phys.

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“…Because is weakly dependent on temperature, instantaneous spatial temperature variations across wafers at given times are expected to be small enough ( 200 K) so that spatial variations in thermal conductivity may be ignored [4]. Thus, (1) may be reduced to (3) The initial and boundary conditions for the system described above are at (4) at (5) at (6) at (7) at (8) where is the wafer surface absorptivity, is the wafer surface emissivity, is the emissivity for the radiant heat losses at the wafer edges, and W cm K is the Stefan-Boltzmann constant. Note that absorptivity and emissivity may depend on wafer temperature, position, and radiant spectral wavelength [16], [17].…”

Section: Thermal Modelmentioning

confidence: 99%

“…It is known that incident-heat-flux profiles (energy distributions) in RTP systems must be nonuniform across wafers to ensure temperature uniformity at all times because of heat losses at wafer edges. Hill and Jones [3] investigated the temperature uniformity of a 150-mm (6-in) wafer in which the intensity was linearly enhanced to a maximum of 8% over the last 15 mm of the wafer. Kakoschke et al [4] presented a wafer-heating theory for estimating the edge-heating compensation required vertically and laterally to ensure temperature Publisher Item Identifier S 0894-6507(01)03520-5.…”

Section: Introductionmentioning

confidence: 99%

Thermal uniformity of 12-in silicon wafer in linearly ramped-temperature transient rapid thermal processing

Lin

Chu

2001

IEEE Trans. Semicond. Manufact.

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This paper presents a systematic method for estimating the dynamic incident-heat-flux profiles required to achieve thermal uniformity in 12-in silicon wafers during linearly ramped-temperature transient rapid thermal processing using the inverse heat-transfer method. A two-dimensional thermal model and temperature-dependent silicon wafer thermal properties are adopted in this study. The results show that thermal nonuniformities on the wafer surfaces occur during ramped increases in direct proportion to the ramp-up rate. The maximum temperature differences in the present study are 0.835 C, 1.174 C, and 1.516 C, respectively, for linear 100 C/s, 200 C/s, and 300 C/s ramp-up rates. Although a linear ramp-up rate of 300 C/s was used and measurement errors did reach 3.864 C, the surface temperature was maintained within 1.6 C of the center of the wafer surface when the incident-heat-flux profiles were dynamically controlled according to the inverse-method approach. These thermal nonuniforimities could be acceptable in rapid thermal processing systems.Index Terms-Inverse heat-transfer method, linear ramp-up rate, rapid thermal processing, thermal uniformity, 12-in silicon wafer.

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“…2), spatial temperature variations across wafers at a certain time are expected to be small enough ( 200 K) so that spatial variations in thermal conductivity may be ignored [5]. Equation (1) is thus reduced to (3) The initial and boundary conditions for the system mentioned above are at (4) at (5) at (6) where is the emissivity for radiant heat loss emitted from the wafer edge. We may assume without loss of generality that the incident heat flux on both sides during processing is equal, i.e.,…”

Section: Thermal Modelmentioning

confidence: 99%

“…Hill and Jones [4] investigated thermal uniformity with a uniform intensity field and one in which the intensity was linearly enhanced to a maximum of 8% vertically over the last 15 mm of a 6-in wafer. Kakoschke et al [5] evaluated enhanced illumination intensities at wafer peripheries vertically and laterally for a compensation of edge heat losses during processing.…”

Section: Introductionmentioning

confidence: 99%

Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method

Lin

Chu

2000

IEEE Trans. Semicond. Manufact.

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Through an inverse heat transfer method, this paper presents a finite difference formulation for determination of incident heat fluxes to achieve thermal uniformity in a 12-in silicon wafer during rapid thermal processing. A one-dimensional thermal model and temperature-dependent thermal properties of a silicon wafer are adopted in this study. Our results show that the thermal nonuniformity can be reduced considerably if the incident heat fluxes on the wafer are dynamically controlled according to the inverse-method results. An effect of successive temperature measurement errors on thermal uniformity is discussed. The resulting maximum temperature differences are only 0.618, 0.776, 0.981, and 0.326 C for 4-, 6-, 8-and 12-in wafers, respectively. The required edge heating compensation ratio for thermal uniformity in 4-, 6-, 8-and 12-in silicon wafers is also evaluated.Index Terms-12-in silicon wafer, inverse heat-transfer method, rapid thermal processing, thermal uniformity.

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Rapid Thermal Annealing - Theory and Practice

Cited by 37 publications

References 5 publications

High-energy density beams and plasmas for micro- and nano-texturing of surfaces by rapid melting and solidification

High-energy density beams and plasmas for micro- and nano-texturing of surfaces by rapid melting and solidification

Thermal uniformity of 12-in silicon wafer in linearly ramped-temperature transient rapid thermal processing

Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method

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