Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

Babiński, A.; Jasiński, Jacek B.; Bożek, R.; Szepielow, A.; Baranowski, J. M.

doi:10.1063/1.1412279

Cited by 108 publications

(66 citation statements)

References 18 publications

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“…The empirical band parameters were taken from Ref. 20. A realistic structure was simulated, in which the input QD size and shape, as well as the capping layer thickness and Sb content were obtained from the TEM measurements, and only the Ga content inside the QDs was considered as parameter to be explored.…”

mentioning

confidence: 99%

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Ulloa

Llorens²,

Alén³

et al. 2012

Applied Physics Letters

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Polarization-resolved resonant fluorescence of a single semiconductor quantum dot Appl. Phys. Lett. 101, 251118 (2012) Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars J. Appl. Phys. 112, 113516 (2012) Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots Appl. Phys. Lett. 101, 231109 (2012) Fluorescence quantum efficiency of CdSe/ZnS quantum dots embedded in biofluids: pH dependence J. Appl. Phys. 112, 104704 (2012) Modification of the conduction band edge energy via hybridization in quantum dots

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mentioning

confidence: 99%

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Ulloa

Llorens²,

Alén³

et al. 2012

Applied Physics Letters

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“…A nominal blue−shift in the peak emission wavelength can be observed due to annealing which is due to In/Ga inter dif− fusion. This is very usual in QD samples capped with GaAs barrier [20].…”

Section: Discussionmentioning

confidence: 99%

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Sengupta

Shah

Halder

et al. 2010

Opto-Electronics Review

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Epitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

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“…One effect is based on insufficient GS gain to achieve lasing threshold, and thus optimized stacking for sufficiently high modal peak gain is crucial to prevent for blue shifted ES laser operation. The second more problematic effect is based on physical changes of the active QD layers due to indium segregation by interdiffusion processes [Leo96,Bab01]. This indium migration out of the QD layers is mainly governed by the vacancy density and is supported by the incorporated strain [Khr97,Ryu95].…”

Section: Qd Blue Shift Suppressionmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

Cited by 108 publications

References 18 publications

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Design and Realization of Novel GaAs Based Laser Concepts

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