RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON FOR THE FORMATION OF ULTRA SHALLOW N+P JUNCTIONS

Georgoulas, N.; Girginoudi, D.; Mitsinakis, A.; Kotsani, M.; Thanailakis, A.

doi:10.1142/9789812810861_0026

Microelectronics, Microsystems and Nanotechnology 2001

DOI: 10.1142/9789812810861_0026

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RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON FOR THE FORMATION OF ULTRA SHALLOW N⁺P JUNCTIONS

N. Georgoulas¹,

D. Girginoudi²,

A. Mitsinakis³

et al.

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RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON FOR THE FORMATION OF ULTRA SHALLOW N⁺P JUNCTIONS

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