Rapid thermal annealing effects on the optical properties of GaAs0.9−xNxSb0.1 structures grown by MBE

Sédrine, N. Ben; Lafosse, Xavier; Mauguin, O.; Chtourou, R.; Harmand, J. C.

doi:10.1016/j.mssp.2014.05.058

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…The E N and C N values of 1.65 and 2.7 eV, obtained for the GaAsN [ 54 ] case, have been suggested [ 48 ]. Other pairs of values for as-grown samples have been proposed as the best fit parameters for E N and C N such as Lin (1.540 and 2.839 eV) [ 49 ], Sedrine (1.76 and 2.7 eV; 1.6 and 2.7 eV) [ 53 , 55 ] or Zhao (1.65 and 2.68 eV) [ 56 ]. The differences among the values, although apparently small, yield big differences in the outcomes.…”

Section: Resultsmentioning

confidence: 99%

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Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

et al. 2017

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As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.

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Section: Resultsmentioning

confidence: 99%

“…The differences among the values, although apparently small, yield big differences in the outcomes. In addition, there are different sets of parameters for the annealed samples: Lin (1.65 and 2.7 eV) [ 48 ], Nunna (1.65 and 3.9 eV) [ 57 ] or Sedrine (1.8 and 2.7 eV) [ 55 ]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

et al. 2017

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“…In the fitting procedure, the amplitude and broadening parameters of the different transition energies, the low energy CPPB parameters (energy ECPPB, amplitude and broadening), as well as the ZnO damaged layer thickness (d) and surface roughness (σSE), were varied simultaneously in order to fit the experimental data. The Levenberg-Marquardt regression algorithm [41][42][43] was used to minimize the mean square error (MSE) which measures the deviation between the theoretical model and the measurement, defined as follows: The bulk ZnO dielectric function (DF bulk ) in equation (2), as determined for the ZnO virgin substrate, was used in the data analysis for all the samples without any change. Indeed, the ZnO DF bulk (ε bulk ) is well-described by the Tanguy model (ε T ) [35] based on analytical expressions of Wannier excitons (bound and unbound states), and includes the high-frequency limit dielectric constant ε ∞ , and terms that describe contributions from low and high-energy transitions (CPPB 1 and CPPB 2 ).…”

Section: ( ) = + ( ) + Cppb + Cppbmentioning

confidence: 99%

Section: ( ) = + ( ) + Cppb + Cppbmentioning

confidence: 99%

Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation

et al. 2019

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Here, we report on the production of nanoripples on the surface of ZnO bulk substrates by ion beam erosion with 20 keV Ar + ions at an oblique incidence (60 • ). The ripple patterns, analyzed by atomic force microscopy, follow a power law dependence for both the roughness and the wavelength. At high fluences these ripples show coarsening and asymmetric shapes, which become independent of the beam direction and evidence additional mechanisms for the pattern development. The shallow damaged layer is not fully amorphized by this process, as confirmed by medium energy ion scattering. A detailed study of the damage-induced changes on the optical properties was carried out by means of spectroscopic ellipsometry. Using a 3-layer model based on Tauc-Lorenz and critical point parameter band oscillators, the optical constants of the damaged layer were determined. The results showed a progressive reduction in the refractive index and enhanced absorption below the bandgap with the fluence.Crystals 2019, 9, 453 2 of 12 with identical crystal structure (wurtzite) and are suitable for applications in optoelectronics, including the fabrication of light emitting diodes and laser diodes [7,8]. However, since commercial GaN-based devices are already available in the global market, considerable interest has shifted to other potential uses of ZnO.The existing reports on the surface modification of ZnO mainly refer to focused ion beams [9] or laser ablation processes [10]. Only recently, some works have reported ripple formation on ZnO when implanting with 10 keV O + ions [11]. More research is needed to understand the physical processes that take place when this kind of radiation resistant material is irradiated, especially with respect to the damage formation and the particular role of preferential sputtering. In this regard, there is also a lack of reliable optical models to explain the evolution of the damage in these semiconductors, which can be helpful to monitor the implantation effects. One technique able to provide such information is spectroscopic ellipsometry (SE), which has been used for the determination of damage profiles in different semiconductors, such as Si [12] or GaAs [13]. However, these models are very specific for every semiconductor and do not take into account the development of very rough surfaces during the implantation: the typical case when producing ripple patterns at high fluences.Considering this scenario, the main goal of this work was to assess the formation of ripple patterns in bulk ZnO by IBS at medium energy (20 keV) using Ar + ions. We analysed the ripple patterns produced by oblique irradiation regarding the roughness, ripple wavelength, and order. In order to evaluate the ion beam modification of the material, we took advantage of SE to model both the optical damage and the roughening of the surface, and to extract the main optical parameters after the irradiation. Materials and MethodsBulk c-plane one-side polished ZnO crystals (supplied by CrysTec and produced by hydrothermal synthesis, Berli...

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Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

Navarro

Martı́nez

Galiana

et al. 2018

Journal of Elec Materi

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The effects of ex-situ annealing in N ambient and in-situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy (MBE) were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS did not reveal significant changes, within the error margin, with respect to the as-grown sample. The in-situ annealed in As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.

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Rapid thermal annealing effects on the optical properties of GaAs0.9−xNxSb0.1 structures grown by MBE

Cited by 7 publications

References 23 publications

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Modelling of Optical Damage in Nanorippled ZnO Produced by Ion Irradiation

Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

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