Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors

Park, Jinhyeok; Seok, Hae‐Jun; Jung, Soyoung; Cho, Hyung Koun; Kim, Han−Ki

doi:10.1016/j.ceramint.2020.09.152

Cited by 28 publications

(13 citation statements)

References 49 publications

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“…The results of the XPS analysis of O 1s obtained from InZnO and InZnTiON are shown in Figure a–d. To obtain information regarding the number of oxygen states bonded with the metal, oxygen vacancies, and absorbed on the surface of the film, a Gaussian distribution was used . To separate each oxygen peak in the XPS data, the positions of the three peaks were fixed at 530, 531.5, and 532.5 eV.…”

Section: Resultsmentioning

confidence: 99%

“…A schematic of the TFT fabrication process is shown in Figure a. The 200 nm thick SiO 2 gate insulator-coated p ++ Si substrate was employed in the fabrication of the TFTs . InZnO and InZnTiON channel layers were deposited via an RF magnetron cosputtering system and patterned using an invar metal shadow mask.…”

Section: Resultsmentioning

confidence: 99%

“…To obtain information regarding the number of oxygen states bonded with the metal, oxygen vacancies, and absorbed on the surface of the film, a Gaussian distribution was used. 50 To separate each oxygen peak in the XPS data, the positions of the three peaks were fixed at 530, 531.5, and 532.5 eV. The relative area of each peak was then calculated.…”

Section: Resultsmentioning

confidence: 99%

“…The 200 nm thick SiO 2 gate insulator-coated p ++ Si substrate was employed in the fabrication of the TFTs. 50 InZnO and InZnTiON channel layers were deposited via an RF magnetron cosputtering system and patterned using an invar metal shadow mask. The channel length and channel width of the TFT were 50 and 1000 μm, respectively.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Lee

Park

et al. 2023

ACS Appl. Mater. Interfaces

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In this study, we incorporated TiN as a carrier suppressor into an amorphous InZnO channel to achieve stable channels for thin-film transistors (TFTs) and light-emitting transistors (LETs). The low electronegativity and standard electrode potential of the Ti dopant led to a reduction in the number of oxygen vacancies in the InZnO channel. Moreover, the substitution of nitrogen into the oxygen sites of InZnO effectively decreased the excess electrons. As a result, the cosputtering of the TiN dopant resulted in a decrease in the carrier concentration of the InZnO channel, serving as an effective carrier suppressor. Due to the distinct structures of TiN and InZnO, the TiN-doped InZnO channel exhibited a completely amorphous structure and a featureless surface morphology. The presence of oxygen vacancies in the InZnO channel creates trap states for electrons and holes. Consequently, the TFT with the InZnTiON channel demonstrated an improved subthreshold swing and enhanced stability during the gate bias stress test. Furthermore, the threshold voltage shift (ΔV th ) changed from 3.29 to 0.86 V in the positive bias stress test and from −0.92 to −0.09 V in the negative bias stress test. Additionally, we employed an InZnTiON channel in LETs as a substitute for organic semiconductors. The reduction in the number of oxygen vacancies effectively prevented exciton quenching caused by hole traps within the vacancies. Consequently, appropriate TiN doping in the InZnO channel enhanced the intensity of the LET devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Lee

Park

et al. 2023

ACS Appl. Mater. Interfaces

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“…TFT is a kind of FETs composed of thin-film elements on a substrate, 27 which is usually used in large-area electronic products, such as liquid crystal displays, 28 light-emitting displays. 29 Some transparent conducting oxides (TCOs) materials, such as ITO, 30 ZnO, 31 and cadmium-oxide, 32 etc., have been incorporated to enable fully transparent TFTs. ZnO is considered the most suitable material for active channel layer material in TFT, as it has excellent semiconductor characteristics (high field effect mobility) and high optical transparency (insensitivity to visible light owing to its wide bandgap).…”

Section: Introductionmentioning

confidence: 99%

Multimodal electrocorticogram active electrode array based on zinc oxide-thin film transistors

Zhang¹,

Zhang

Xia

et al. 2022

Preprint

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Active electrocorticogram (ECoG) electrodes can amplify the weak electrophysiological signals and improve the anti-interference ability, but the traditional active electrodes are so opaque that cannot realize photoelectric collaborative observation. Here an active and fully-transparent ECoG array based on zinc oxide-thin film transistors (ZnO-TFTs) was developed as the local neural signal amplifier for electrophysiological monitoring. The transparency of the proposed ECoG array was up to 85% which is superior to previous reported active electrode array. Various electrical characterizations demonstrated its ability of electrophysiological signal recording, with a higher signal-to-noise ratio of 19.9 dB compared to the Au grid one (13.2 dB). The high transparency of ZnO-TFT electrode array allowed the collecting electrophysiological signals under direct light stimulation on optogenetic mice brain concurrently. The ECoG array could also work under 7-Tesla magnetic resonance imaging to record local brain signal without affecting brain tissue imaging. As the most transparent active ECoG array to date, it provides a powerful multimodal tool for brain observation, including recording brain activity under synchronized optical modulation and 7-Tesla magnetic resonance imaging.

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Multimodal Electrocorticogram Active Electrode Array Based on Zinc Oxide‐Thin Film Transistors

Zhang¹,

Zhang

Xia

et al. 2022

Advanced Science

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Active electrocorticogram (ECoG) electrodes can amplify weak electrophysiological signals and improve anti‐interference ability; however, traditional active electrodes are opaque and cannot realize photoelectric collaborative observation. In this study, an active and fully transparent ECoG array based on zinc oxide thin‐film transistors (ZnO TFTs) is developed as a local neural signal amplifier for electrophysiological monitoring. The transparency of the proposed ECoG array is up to 85%, which is superior to that of the previously reported active electrode arrays. Various electrical characterizations have demonstrated its ability to record electrophysiological signals with a higher signal‐to‐noise ratio of 19.9 dB compared to the Au grid (13.2 dB). The high transparency of the ZnO‐TFT electrode array allows the concurrent collection of high‐quality electrophysiological signals (32.2 dB) under direct optical stimulation of the optogenetic mice brain. The ECoG array can also work under 7‐Tesla magnetic resonance imaging to record local brain signals without affecting brain tissue imaging. As the most transparent active ECoG array to date, it provides a powerful multimodal tool for brain observation, including recording brain activity under synchronized optical modulation and 7‐Tesla magnetic resonance imaging.

show abstract

Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors

Cited by 28 publications

References 49 publications

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Multimodal electrocorticogram active electrode array based on zinc oxide-thin film transistors

Multimodal Electrocorticogram Active Electrode Array Based on Zinc Oxide‐Thin Film Transistors

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