Rapid synthesis of gallium nitride powder

Effect of growth temperature on Eu incorporation in GaN powders

“…Up to now, the few reported works on Eu-doped GaN powders include a combustion method using Ga(NO 3 ) 3 Á 6H 2 O, Eu(NO 3 ) 3 Á 6H 2 O and N 2 H 4 as starting materials [3]; ammonolysis of the freeze-dried precusors made with Ga(NO 3 ) 3 Á 6H 2 O, Eu(NO 3 ) 3 Á 5H 2 O, GaCl 3 , EuCl 3 , GaF 3 ,+HF, EuF 3 as starting materials [4]; and a two-stage vapor-phase method where Ga and NH 3 react to provide GaN in the first stage and GaCl reacts with NH 3 on the seeds with impurity doping in the second stage [5], etc. Recently, we developed a simple, low-cost, and high-yield process to convert Ga into high-quality GaN using Bi as a wetting agent, and Er, Eu doping has been achieved [7,8,10]. In this paper, we report the growth temperature effect on the effective incorporation of Eu in GaN powder.…”

“…After purging the tube with flowing Ar for 20 min, the temperature was brought up and the gas switched to 99.9999% NH 3 for reaction. This process was described in detail elsewhere [8,10]. After 5 h of reaction, the layered chunk product was taken out and ground into fine powders with particle size $3 mm as observed by SEM.…”

High intensity red emission from Eu doped GaN powders

“…Up to now, the few reported work on Eu doped GaN powders include a combustion method [3]; ammonolysis of the freeze-dried [4]; and a two-stage vapor phase method [5], etc. Recently, we developed a simple, low-cost, and high-yield process to convert Ga to high quality GaN using Bi as a wetting agent, and Er, Eu doping has been achieved [7,8,10]. In this paper, we report the effect of the growth temperature on the effective incorporation of Eu in GaN powders.…”

“…After purging the tube with high purity Ar, the temperature was brought up and the gas switched to 99.9999% NH 3 for reaction. This process was described in detail elsewhere [8,10]. After 5 hours of reaction, the layered chunk product was taken out and ground into fine powders with particle size ~3 µm as observed by SEM.…”

A catalyst free method to grow GaN nanowires on porous Si at low temperature

“…The E 1 (LO) and E 1 (TO) bands at 741 and 558 cm -1 can be overlapped with A 1 (LO) and A 1 (TO) peaks, respectively; as A 1 (LO) and A 1 (TO) peaks are considerably broadened [41,42]. And also wavenumber of bulk crystalline Si (substrate) placed at approximately 520cm -1 that can be overlapped with A1(TO) [43].…”