Rapid quenching and glass formation in chalcogenide glasses: Preparation and properties of Ge–As–Te glasses over an extended composition ranges

Ramesh, K.

doi:10.1016/j.jnoncrysol.2009.05.068

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…The bulk polycrystalline Cu 32 As 40 Se 28 has been subjected to rapid quenching in a twin roller melt spinning system to obtain glass in the form of thin flakes. 24 The thermal properties of the samples were measured by a differential scanning calorimeter (DSC) using a TA Instruments (MDSC 2920 system, New Castle, DE) with a scan rate of 101C/min.…”

Section: Experiments Proceduresmentioning

confidence: 99%

Electrical Switching in Cu–As–Se Glasses

Karuppannan

Ganesan

Asokan

2011

Int J of Appl Glass Sci

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Electrical switching in CuxAs40Se60−x glasses has been studied over a wide composition range for 0≤x≤32. The glasses with lower Cu concentrations (x<15) do not exhibit switching, whereas glasses in the range 15≤x≤25 show a threshold type switching. The glasses in the range 26≤x≤29 exhibited an unusual switching from low‐resistance to high‐resistance state. For x≥30, the glasses are found to show a memory switching. The thermally crystallized samples indicate that the structural network is characterized by Cu3AsSe4 and As2Se3 for x<15 and by Cu3AsSe4 and Cu2As3 for x≥25. The composition range 15≤x≤20 is characterized only by Cu3AsSe4 structural units. The samples cooled from their melt show only the ternary Cu3AsSe4 for x≤20. For x>20, precipitates of “As” have also been observed along with Cu3AsSe4 and Cu2As3 phases. The present studies provided a unique way to understand the electrical switching exhibited by chalcogenide glasses based on the thermal model and the filament formation.

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Section: Experiments Proceduresmentioning

confidence: 99%

Electrical Switching in Cu–As–Se Glasses

Karuppannan

Ganesan

Asokan

2011

Int J of Appl Glass Sci

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“…In the past few years, ternary compound group IV-V-VI materials have been used as typical chalcogenide PCMs for non-volatile memory to satisfy the demand for storage requirements for their programmable conductance states and have even been put into actual commercial production [4][5][6][7][8]. At the same time, some articles still concentrate on the fabrication and characterization of vitreous systems or thin film PCMs [9][10][11][12], others pay attention to the optical properties and temperature-dependent thermal conductivity [13][14][15][16][17][18]. On the other hand, some researches have turned to focus on the electrical properties and structure investigation of the materials themselves [19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Controlled Synthesis and Electrical Properties Study of GeAs<sub>2</sub>Te<sub>4</sub> Single Crystals

Chen

et al. 2023

JMNM

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Exploration of the optoelectronic memristor is required to investigate the photoelectric properties of materials. The traditional memristor material GeAs2Te4 is hopeful to be developed into a new type of optoelectronic memristor. However, acquiring high-quality single crystals remains challenging, and the electrical properties of single crystals of GeAs2Te4 need to be explored. Herein, a controlled method is introduced to grow reliable quality GeAs2Te4 single crystals, and the electrical and optoelectronic properties are studied. The photodetector based on GeAs2Te4 exhibits acceptable optoelectronic performance at designed low temperatures. The responsivity and detectivity of the GeAs2Te4-based photodetector reached the value of about 0.137 A W-1 and 6.9×107 Jones, respectively. It is promising to introduce this family of materials into the field of photodetector and also maybe further in the area of optoelectronic memristors.

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