Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InO_xChannels via O₂Plasma Treatment

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor

“…The oxygen radical that generated using plasma generator (generate condition: Ar/O 2 = 400/400 sccm, plasma power = 300 W) is used as reactant and plasma dose time is 5 s. Precursor dose time is 1.5 s except for TMGa (0. 4), IGO(6), IGO (9), and IGO (19), respectively), as shown in Figure 2.…”

“…The lower oxygen content might be associated with a large amount of oxygen-related defects and result in a higher electron concentration as a carrier in oxide films. 50 Figure S2 shows the XPS O 1s analysis of DT-IGO (9) and the relative peak area of the deconvoluted subpeaks with TM-IGO(4) and DT-IGO (9). Note that the ratio of subpeak B (an oxygen-related defect) is relatively high (13.6%) compared with that of TM-IGO(9) (9.4%).…”

“…The schematics of IGO TFTs are illustrated in Figure 8a. Figure 8b shows the transfer curves of TM-IGO(4) and DT-IGO (9) TFTs that have the same In/Ga ratio (2.3), as shown in Figure 4. The device properties such as threshold voltage (V th ), fieldeffect mobility (μ FE ), and subthreshold swing (S.S) as a function of indium subcycles are presented in Figure 8c−e and Table 2, respectively.…”

“…Recently, atomic layer deposition (ALD) has been explored as a promising deposition method that can precisely control composition and film thickness through a self-limiting reaction. ALD-processed InO x TFTs have demonstrated mobilities of 7.8–15 cm 2 /(V s), − whereas a ZnO x TFT achieved more than 20 cm 2 /(V s) mobility . In addition, for binary and ternary metal systems, the In–Zn–O x (IZO), In–Ga–O x (IGO), and IGZO-based TFTs exhibited mobilities of 42.1 cm 2 /(V s), 9.5 cm 2 /(V s), and 14.8–74.3 cm 2 /(V s), respectively, for different process parameters and precursors in the ALD process.…”

Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices

“…To reduce the maximum fabrication temperature of the oxide semiconductor channel devices, some effectual post-treatment strategies have been proposed, such as long time low-temperature annealing 64 and plasma surface treatment of the back channel at a low temperature. 65 As an example, post-annealing at 200 °C in air can significantly improve the performance of the ALD ZnO channel-based TFT by extending annealing time, which is equivalent and even superior to the post-annealing at 300 °C for a shorter time. 64 In terms of post-annealing at 200 °C for 120 min in air, the device shows a very low off-current of 2.98 × 10 −13 A, a small SS of 244 mV/decade, a quite large on/off current ratio of 4 × 10 8 , and high field-effect electron mobility of 21.9 cm 2 /V•s.…”