Rapid growth of localized nature of carriers in the Kondo semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>CeFe</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Al</mml:mi><mml:mn>10</mml:mn></mml:msub></mml:mrow></mml:math>with nonmagnetic ground state due to small Rh doping

Tanida, Hiroshi; Nakamura, Michio; Sera, Masafumi; Nishioka, Takashi; Matsumura, Masatoshi

doi:10.1103/physrevb.92.235154

Cited by 10 publications

(17 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3). A very similar behavior has been observed in Ce(Fe 1−x Rh x ) 2 Al 10 with x = 0.05, which has a spin gap of 9(2) meV in its INS spectrum [50], but has no charge gap in the resistivity [49]. We attribute this behavior to either the development of an in-gap density of states or a shift of the Fermi level position from the middle of the lower and upper hybridized band (i.e., E F positioned in the gap) to the bottom of the upper hybridized band.…”

Section: E Inelastic Neutron Scatteringsupporting

confidence: 73%

“…The broad peak in χ (T ) near 75 K for x = 0 moves to 40 K for x = 0.04 and then disappears for x = 0.08. A similar trend in χ (T ) with electron doping was also seen for Rh-doped CeFe 2 Al 10 and was attributed to a localization of 4 f electrons as a consequence of an increase in the Fermi energy by electron doping [49]. However, no signature of magnetic ordering could be seen down to 2 K for up to 20% Rh doping.…”

Section: Magnetic Susceptibilitysupporting

confidence: 67%

“…III D), indicating the onset of long-range AFM ordering for x = 0.15. Here it is important to note that no magnetic ordering was seen down to 2 K in Ce(Fe 0.8 Rh 0.2 ) 2 Al 10 , despite the enhancement of the localized nature of the 4 f electron state [49].…”

Section: Heat Capacitymentioning

confidence: 82%

“…Rh substitution in CeFe 2 Al 10 leads to a similar localization of the 4 f state but does not induce magnetic ordering for up to 20% Rh substitution down to 2 K. However, a closing of the Kondo gap and the onset of a metallic ground state are observed [49,50].…”

Section: Introductionmentioning

confidence: 93%

“…It is important to note that the lattice parameters in Ce(Fe 1−x Rh x ) 2 Al 10 isotropically increase by 0.3%-0.4% as x is increased to 0.2, leading to a negative pressure effect [49]. Upon applying pressure, the lattice parameters of CeT 2 Al 10 (T = Fe, Ru, Os) all decrease monotonically, but the response is anisotropic [55].…”

Section: A Crystal Structurementioning

confidence: 99%

See 4 more Smart Citations

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

et al. 2021

View full text Add to dashboard Cite

We report a systematic study of the 5d-electron-doped system Ce(Fe 1−x Ir x ) 2 Al 10 (0 x 0.15). With increasing x, the orthorhombic b axis decreases slightly while accompanying changes in a and c leave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor CeFe 2 Al 10 , the low-temperature energy gap, which is proposed to be a consequence of strong c-f hybridization, is suppressed by a small amount of Ir substitution for Fe and that the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The charge or transport gap collapses (at x = 0.04) faster than the spin gap with Ir substitution. Magnetic susceptibility, heat capacity, and muon spin relaxation measurements demonstrate that the system undergoes long-range antiferromagnetic order below a Néel temperature T N of 3.1(2) K for x = 0.15. The ordered moment is estimated to be smaller than 0.07(1) μ B /Ce, although the trivalent state of Ce is confirmed by Ce L 3 -edge x-ray absorption near edge spectroscopy. It is suggested that the c-f hybridization gap, which plays an important role in the unusually high ordering temperatures observed in CeT 2 Al 10 (T = Ru and Os), may not be necessary for the onset of magnetic order with a low T N seen here in Ce(Fe 1−x Ir x ) 2 Al 10 .

show abstract

Section: E Inelastic Neutron Scatteringsupporting

confidence: 73%

Section: Magnetic Susceptibilitysupporting

confidence: 67%

Section: Heat Capacitymentioning

confidence: 82%

Section: Introductionmentioning

confidence: 93%

Section: A Crystal Structurementioning

confidence: 99%

See 3 more Smart Citations

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

et al. 2021

View full text Add to dashboard Cite

show abstract

Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe₂Al₁₀

Tripathi

Adroja

Lees

et al. 2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

We examined the effect of 3p- and 5d-electron doping on the Kondo semiconductor CeFe2Al10 by means of the electrical resistivity (ρ), magnetic susceptibility (χ), and specific heat (C) measurements. The results show that in the 3p-electron-doped system CeFe2Al10−y Si y , the semiconducting behavior is suppressed for y = 0.05, and the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The Si substitution leads to a large decrease in the paramagnetic Weiss temperature θP indicating a reduction in c-f hybridization strength, however the Si does not induce magnetic order up to y = 0.3 down to 2K. The systematic changes in ρ(T), χ(T), and C(T) are similar to those for 5d-electron doped system CeFe2−x Ir x Al10, although, Ir substitution induces a bulk antiferromagnetic transition below 3.1 K in CeFe1.7Ir0.3Al10. These changes can be explained by the collapse of the hybridization gap due to the suppression of the c-f hybridization effect. Our results further confirm that the collapse of the spin/charge gap by an excess electron doping is one of the universal features of the Kondo semiconductors CeT 2Al10 (T = Fe, Ru, and Os).

show abstract

Effect of Nd and Rh substitution on the spin dynamics of the Kondo-insulator CeFe2Al10

et al. 2020

Self Cite

View full text Add to dashboard Cite

The dynamic magnetic properties of the Kondo-insulator state in CeFe2Al10 (spin gap, resonance mode) have been investigated using polarized neutrons on a single crystal of pure CeFe2Al10. The results indicate that the magnetic excitations are polarized mainly along the orthorhombic a axis and their dispersion along the orthorhombic c direction could be determined. Polycrystalline samples of Nd-and Rh-doped CeFe2Al0 were also studied by the time-of-flight technique, with the aim of finding out how the low-energy magnetic excitation spectra change upon isoelectronic substitution of the rare-earth (Nd) on the magnetic Ce site or electron doping (Rh) on the transition-element Fe sublattice. The introduction of magnetic Nd impurities strongly modifies the spin gap in the Ce dynamic magnetic response and causes the appearance of a quasielastic signal. The crystal-field excitations of Nd, studied in both LaFe2Al10 and CeFe2Al10, also reveal a significant influence of f-electron hybridization (largest in the case of Ce) on the crystal-field potential. As a function of the Rh concentration, a gradual change is observed from a Kondo-insulator to a metallic Kondo-lattice response, likely reflecting the decrease in the hybridization energy. 1 The concept of spin-exciton in the narrow gap specific for Kondo insulators was developed by Riseborough [35,36] . This excitation mode develops due to the exchange interaction between RE-ions in Kondo-lattice.

show abstract

Rapid growth of localized nature of carriers in the Kondo semiconductorCeFe2Al10with nonmagnetic ground state due to small Rh doping

Cited by 10 publications

References 38 publications

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe₂Al₁₀

Effect of Nd and Rh substitution on the spin dynamics of the Kondo-insulator CeFe2Al10

Contact Info

Product

Resources

About

Rapid growth of localized nature of carriers in the Kondo semiconductorCeFe2Al10with nonmagnetic ground state due to small Rh doping

Cited by 10 publications

References 38 publications

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Crossover from Kondo semiconductor to metallic antiferromagnet with5d-electron doping inCeFe2Al10

Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe2Al10

Effect of Nd and Rh substitution on the spin dynamics of the Kondo-insulator CeFe2Al10

Contact Info

Product

Resources

About

Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe₂Al₁₀