Interfacial reactions between eutectic SnIn and single crystalline Cu during solid-state aging at low temperature were investigated systematically. Three types of phase transformations between Cu(In,Sn) 2 layer and Cu 2 (In,Sn) layer were observed, which are Cu(In,Sn) 2 grows and Cu 2 (In,Sn) consumes at 40 C, Cu(In,Sn) 2 and Cu 2 (In,Sn) grow simultaneously at 60 C, as well as Cu(In,Sn) 2 consumes and Cu 2 (In,Sn) grows at 80 and 100 C. According to physicochemical approach, the chemical reactions at Cu/Cu 2 (In,Sn)/Cu(In,Sn) 2 /SnIn interfaces were discussed in detail. It was concluded that the diffusion ability of Cu and In atoms dominated different phase transformations. When diffusion constants k 1In2 > 8/3k 1Cu2 Cu(In,Sn) 2 will grow, and if k 1Cu2) k 1In2 Cu 2 (In,Sn) will grow. Both Cu(In,Sn) 2 and Cu 2 (In,Sn) can grow in the condition of k 1In2 % k 1Cu2. The values of k 1Cu2 and k 1In2 at different temperatures on (100)Cu and (111)Cu substrate were also calculated or estimated by analyzing the growth kinetics of the compound layers. V