Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

Kim, Dong Wook; Park, Jaehoon; Hwang, Jaeeun; Kim, Hong Doo; Ryu, Ji Hwa; Lee, Kang Bok; Baek, Kyu Ha; Do, Lee‐Mi; Choi, Jong Sun

doi:10.1007/s13391-014-4209-0

Cited by 18 publications

(21 citation statements)

References 15 publications

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“…The quality of the films was determined by the elimination of the residual alkyl compound [designated the metal alkyl oxide (M-OR) peak in Figure 6 Meanwhile, is important to remember that the substrate temperature of IZO films should be maintained at temperatures about 100°C during the pulse UV-light treatment. We demonstrated in a previous work that a small amount of heat ( ∼ 100°C) should be maintained to evaporate during irradiation because the condensation is accompanied by volatile residues such as water and alcohol [16,21]. Herein, we suggest that the prime role of the photo-annealing process is to provide sufficient energy to break the metalalkoxide bond and synthesize the metal oxide via the hydrolysis reaction.…”

Section: Resultsmentioning

confidence: 86%

Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

Park

Kim

Shin

et al. 2016

Journal of Information Display

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An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the transparent metal oxide film provide sufficient energy to carry out sol-gel condensation because of the extremely high peak energy and broad irradiation spectrum of the xenon lamp used in this study. The fabricated indium zinc oxide TFTs had a field-effect mobility of 2.4 cm 2 V −1 s −1 , which is comparable to a device performance of 2.7 cm 2 V −1 s −1 obtained through thermal annealing.

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Section: Resultsmentioning

confidence: 86%

Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

Park

Kim

Shin

et al. 2016

Journal of Information Display

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Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

“…As shown in Figure c, Choi and co‐workers reported on a ZnO film formed at a low‐temperature of 90 °C using a xenon flash lamp, which emitted a white light over a wide wavelength range (350–950 nm) . Generally, a xenon flash lamp is used for processes requiring high photon energy, such as curing and sintering.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

300

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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“…Besides the mechanical issues induced by the temperature gradient, the formation of gaseous products can trigger delamination, microcracks and microstructural changes during and after flashing. This problem is especially relevant for thin films which are fabricated via solution‐based techniques employing precursors . To overcome this, a mild drying step on a hot plate and/or a less intense FLA can be applied .…”

Section: Flash Lamp Annealingmentioning

confidence: 99%

“…Kim et al used a zinc ammonia hydroxide complex in order to fabricate zinc‐oxide thin‐film transistors on Si/SiO 2 substrates via FLA . The samples were exposed to a different number of pulses ranging from 9 to 45 while keeping the samples at a constant temperature of 90 °C in order to eliminate solvent residues.…”

Section: Flash Lamp Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

Cited by 18 publications

References 15 publications

Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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