Rapid crystallization of amorphous silicon at room temperature

Fojtı́k, P.; Dohnalová, Kateřina; Mates, T.; Stuchlı́k, J.; Gregora, I.; Chval, J.; Fejfar, A.; Kočka, J.; Pelant, I.

doi:10.1080/13642810208222940

Cited by 22 publications

(24 citation statements)

References 21 publications

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“…Because the main observed change [7] was the decrease of H, he concluded that the grain boundaries have been modified. In agreement with [8] the important role of H has been observed for another low T S process -solid phase crystallization [9]. …”

Section: Discussionmentioning

confidence: 59%

Formation of microcrystalline silicon at low temperatures and role of hydrogen

Kočka

Mates

Fojtı́k

et al. 2004

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 59%

Formation of microcrystalline silicon at low temperatures and role of hydrogen

Kočka

Mates

Fojtı́k

et al. 2004

Journal of Non-Crystalline Solids

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“…The crystalline nature of the island was evidenced, among others, by the X-ray diffraction technique [40] and by electroluminescence studies [38]. Here we present an example of micro-Raman investigation of the crystallized regions, together with information about the morphology and the crystalline volume fraction of resulting poly-Si [2].…”

Section: Non-traditional Preparation Of Polycrystalline Siliconmentioning

confidence: 94%

“…We have shown recently that a-Si:H can get crystallized even at room temperature(!) [2,38], provided that:…”

Section: Non-traditional Preparation Of Polycrystalline Siliconmentioning

confidence: 99%

See 1 more Smart Citation

The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Kočka

Fejfar

Mates

et al. 2004

phys. stat. sol. (c)

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Silicon thin films grown near the boundary between the amorphous/microcrystalline growth offer superior properties for industrial applications. Series of silicon samples, in which crossing of this transition region was achieved by changing a single technological parameter (dilution of silane in hydrogen, deposition temperature, sample thickness) were used to test our model of transport, connecting the macroscopically observed transport properties and the crystallinity, hydrogen content, grain size and grain boundaries. Microscopic study by AFM led to the formulation of the geometrical model of growth of mixed phase Si. The demand for research of microcrystalline or polycrystalline silicon prepared at low substrate temperatures is stimulated by the use of cheap plastic substrates. In addition to a direct deposition an alternative technology, such as metal-induced crystallization supported by the electric field is discussed. Possible future application of thin silicon films, for example in a "nanolithography", is also shown.

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“…Crystallization is typically induced by laser annealing [3] or high temperature furnace annealing [4]. Presence of silicide forming metals such as nickel [5] or application of electric field [6,7] was found to reduce the crystallization temperature.…”

Section: Introductionmentioning

confidence: 99%