Rapid CIS-process for high efficiency PV-modules: development towards large area processing

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

“…In consequence, the comparatively large intensities of the photoemission and Auger lines of S and Se observed on the Mo Front point to the formation of a Mo(S,Se) 2 and MoSe 2 layer at the back contact for the CIGSSe and CIGSe sample, respectively. This was similarly reported/suggested in the past [20][21][22][23][24][25]. However, as shown in Fig.…”

Sulfurization of Co-Evaporated Cu(In,Ga)Se2 as a Postdeposition Treatment

“…It has also been shown that an improvement from 14.5% to 16% efficiency can be obtained by annealing with elemental sulfur [6]. Among the explanations for the benefit of surface sulfurization are band gap widening of the surface [5] and passivation of deep defect states [6][7][8]. Annealing CIGSe in the presence of the metalorganic sulfur precursor ditertiarybutylsulfid has also been shown to result in formation of a S/Se surface gradient in coevaporated CIGSe [9].…”

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

“…and d.c. sputtering. The preparation process is described elsewhere in detail [2]. The Schottky devices were produced by deposition of a 50 nm thick Cr film on top of the Cu(In,Ga)(S,Se) 2 surface, followed by a 200 nm thick Au layer for mechanical protection [18].…”

“…The preparation process is described elsewhere in detail [2]. The Schottky devices were produced by deposition of a 50 nm thick Cr film on top of the Cu(In,Ga)(S,Se) 2 surface, followed by a 200 nm thick Au layer for mechanical protection [18]. Accelerated lifetime testing was performed under the standardized DH conditions at 85 • C ambient temperature and 85% relative humidity for various time periods (24 h, 144 h, 294 h, and 438 h).…”