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Ohnesorge, B.; Albrecht, M.; Oshinowo, J.; Forchel, A.; Arakawa, Y.

doi:10.1103/physrevb.54.11532

Cited by 315 publications

(165 citation statements)

References 20 publications

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“…The capture time and phonon-assisted relaxation times are in good agreement with values typically reported in the literature [7], [8]. The Auger-assisted relaxation is fast compared to most previous reports but agrees with the value found in [4].…”

Section: Modelsupporting

confidence: 81%

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

220

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. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices. I E E E Photonics Technology Letters, 13(6) Abstract-Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer dynamics.Index Terms-Gain recovery, quantum-dot amplifiers, ultrafast.

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Section: Modelsupporting

confidence: 81%

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

220

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“…In fact, Auger relaxation was shown to be more effective than multiphonon relaxation for excitation densities corresponding to у1 electron-hole pair per dot per pulse in InGaAs/GaAs self-assembled QDs. 21 This also agrees with the theoretical prediction of Ferreira and Bastard, 23 who have calculated relaxation times 0 Ϸ0.1-10 ps for an Auger process involving only two particles in a QD. The inset in Fig.…”

Section: ͓S0003-6951͑00͒05123-8͔supporting

confidence: 80%

“…This value is comparable to the rise times reported for shortwavelength InAs/GaAs QDs at similar excitation levels. 19,21,22 The simultaneous rise of the PL signal from different states clearly proves that the relaxation time 0 between states in the dots is not the limiting factor in the PL rise, i.e., 0 Ӷ rise . Since rise is also much shorter than the measured carrier lifetime, we conclude that there is no relaxation bottleneck in these QDs, i.e., all carriers relax to the ground state before recombining.…”

Section: ͓S0003-6951͑00͒05123-8͔mentioning

confidence: 97%

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Fiore¹,

Borri²,

Langbein³

et al. 2000

Applied Physics Letters

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We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 μm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots.

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“…Thus, the carrier capture has to support both the dot and cavity excitation, which decays with the lifetime τ cav . To clearly see the second-rung from PL alone, one thus must have τ capt ≪ τ Rabi and τ capt ≪ τ cav , which is difficult to fulfill in current experiments since the typical capture times of τ capt = 50 ps [24] exceed both the Rabi (11 ps) and the cavity lifetime (25 ps) [11]. Further problematic aspects are the dephasing and the incomplete carrier capture resulting in f e,h < 1.…”

mentioning

confidence: 99%

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

2008

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It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the twophoton strong-coupling states. Using a microscopic theory, the second-rung resonance is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.PACS numbers: 42.50. Pq, 42.50.Ar, 78.67.Hc, 78.90.+t Even though light-quantization effects, such as squeezing [1], antibunching [2], and entanglement [3], have been observed under a wide range of conditions, one can rarely detect the discrete energy levels of the different photonnumber states directly as resonances. Under strongcoupling conditions between a two-level resonance at the energy ω and the quantized resonant light field, the resulting dressed-state resonances appear at ωn±g √ n + 1 where n is the occupation of the photon-number state |n and g is the light-matter coupling constant [4]. The resulting discrete energy structure resembles a ladder with n-dependent rungs. The first rung shows the so-called vacuum Rabi splitting 2g, the second rung shows the splitting 2g √ 2, and so on. For sufficiently small damping and dephasing, the different rungs are clearly visible as discrete resonances, e.g., in transmission spectra.The first observations of strong coupling [5,6] and the second rung [7] were reported for atoms in high-quality cavities. Besides the demonstration of the discrete nature of light, this research has lead to major advances, e.g. in utilizing entanglement effects as a basis for quantum-logic applications [8,9]. The clear identification of the secondrung resonance can be considered as the critical step if one wants to use other materials, such as solid-state systems for strong-coupling applications. A promising candidate are semiconductor quantum dots (QD) in microcavities. Recent experiments [10,11,12,13] have already demonstrated that one can see clear vacuum Rabi splitting effects in the photoluminescence (PL) of such systems. However, despite continuing attempts, the second rung resonance has not yet been observed. The most likely reason for this failure is that dephasing and the other broadening effects in the real systems smear out the expected discrete features.In this Letter, we propose a novel scheme to observe the second-rung strong coupling effects even under the realistic broadening conditions of the currently available samples. In our approach, we use a fully microscopic theory to determine the exact conditions to obtain unambiguous evidence for the presence of the second-rung resonance in QD microcavities. Our results confirm the difficulty of the second-rung observations in standard semiconductor experiments that monitor PL after carrier capture of electrons, initially created to the wetting layer. However, we demonstrate that it should be completely feasible to observe the second rung in re...

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Rapid carrier relaxation in self-assembledInxGa1−

Cited by 315 publications

References 20 publications

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

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