Rapid and Selective Deposition of Patterned Thin Films on Heterogeneous Substrates via Spin Coating

Abstract

The selective deposition of polymer thin films can be achieved via spin coating by manipulating interfacial interactions. While this “spin dewetting” approach sometimes generates spatial localization on topographic and chemical patterns, the connection between material selection, process parameters, and resulting film characteristics remains poorly understood. Here, we demonstrate that accurate control over these parameters allows incomplete trichlorosilane self-assembled monolayers (SAMs) to induce spin dewetting on both homogeneous (SiO2) and heterogeneous (Cu/SiO2 or TiN/SiO2) surfaces. Glassy polymers undergo a sharp transition from uniform wetting to complete dewetting depending on spin speed, solution concentration, polymer molecular weight, and SAM chemistry. Under optimal conditions, spin dewetting on line–space patterns results in the selective deposition of polymer over regions not functionalized with SAM. The insights described herein clarify the importance of different variables involved in spin dewetting and provide access to a versatile strategy for patterning polymeric thin films.

Solutal‐Marangoni‐Flow‐Mediated Growth of Patterned Highly Crystalline Organic Semiconductor Thin Film Via Gap‐Controlled Bar Coating

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Precise Definition of a “Monolayer Point” in Polymer Brush Films for Fabricating Highly Coherent TiO2 Thin Films by Vapor-Phase Infiltration

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A New Hybrid Sensitive PANI/SWCNT/Ferrocene-Based Layer for a Wearable CO Sensor

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