Range profiles of helium in solids

Fink, D.; Biersack, J.P.; Städele, M.; Cheng, V.K.C.

doi:10.1080/00337578708225333

Cited by 14 publications

(1 citation statement)

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“…For this sake, we recently published results on the range profiles of helium in various solids (50-1500 keV, Ref. 6) and boron in silicon (9-2000 keV, Ref. 7).…”

Section: Introductionmentioning

confidence: 99%

5 keV to 2 MeV lithium implantation and diffusion in amorphous silicon

Fink

Biersack

Schoelch

et al. 1989

Radiation Effects and Defects in Solids

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Low dose implanted lithium depth profiles in preamorphized silicon have been measured in the energy range of 5 keV to 2 MeV by means of three different nuclear reaction techniques and SIMS measurements, and they are compared to theory. Though the agreement is good for the mean projected range, we find systematic deviations for the range straggling.Further, the shapes of lithium depth profiles are studied as a function of the preamorphization dose.Also, the diffusion of Li in amorphous Si was measured between -18 and + 350°C. It is described by D=Dt,*exp( -E , / k T ) , the values of Do and E, ranging from those for purely interstitial diffusion (Do = 2 . 1()-'4?U58 cmL s -I and EA=0.74k0.5eV) up to higher ones, which describe trap controlled diffusion (D,,=3 x 10+i3*t'cm's-' and E= 1.74+0.1 eV). Agradual transition between those extremes with diffusion time is observed.

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“…For this sake, we recently published results on the range profiles of helium in various solids (50-1500 keV, Ref. 6) and boron in silicon (9-2000 keV, Ref. 7).…”

Section: Introductionmentioning

confidence: 99%