2020
DOI: 10.1103/physreve.102.012312
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Random telegraph signal analysis with a recurrent neural network

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Cited by 5 publications
(5 citation statements)
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“…For example, in a submicron-sized metal-oxide-semiconductor field-effect transistor (MOSFET), if there is a trap to capture or emit a single charge carrier, device currents in the transport channel exhibit arbitrary patterns of two-level RTSs over time. Similar RTS phenomena are discerned in superconducting qubits 14 , 15 , single photon avalanche diodes 16 , ultrasensitive biosensors 17 , and single-cell activities in ion channels 18 . Real-time dynamics in quantum electrical devices also reveal rapid jumping sequences 19 , 20 .…”
Section: Introductionmentioning
confidence: 58%
See 1 more Smart Citation
“…For example, in a submicron-sized metal-oxide-semiconductor field-effect transistor (MOSFET), if there is a trap to capture or emit a single charge carrier, device currents in the transport channel exhibit arbitrary patterns of two-level RTSs over time. Similar RTS phenomena are discerned in superconducting qubits 14 , 15 , single photon avalanche diodes 16 , ultrasensitive biosensors 17 , and single-cell activities in ion channels 18 . Real-time dynamics in quantum electrical devices also reveal rapid jumping sequences 19 , 20 .…”
Section: Introductionmentioning
confidence: 58%
“…Recently, two interesting studies attempted to build neural network models for examining RTSs. One study applied a clustering neural network to assess a long-time series of currents in a resistive random access memory device with improved weighted TLP 40 , and the other work constructed a long short-term memory (LSTM) recurrent neural network (RNN) to evaluate phase RTSs in superconducting double dots 15 . Hence, systematic analysis models of complex RTSs are sought-after, and to the best of our knowledge, a step-by-step protocol for the quantitative RTS analysis and its explicit descriptions are still needed.…”
Section: Introductionmentioning
confidence: 99%
“…For example, in a submicron-sized MOSFET, if there is a trap to capture or emit a single charge carrier, device currents in the transport channel exhibit arbitrary patterns of two-level RTSs over time. Similar RTS phenomena are discerned in superconducting qubits [14], single photon avalanche diodes [15], ultrasensitive biosensors [16], and single-cell activities in ion channels [17]. Real-time dynamics in quantum electrical devices also reveal rapid jumping sequences [18,19].…”
mentioning
confidence: 64%
“…For instance, short-channel MOSFETs display RTSs in drain currents, where two distinctive currents are observed when a single charge trap independently captures or emits an electron [ 43 , 44 , 45 ]. As another example, a two-level fluctuator at the superconducting qubit systems is considered to be responsible for the current RTS [ 46 , 47 ]. Each RTS is determined by three quantities of the amplitude between two distinct values of a measurement variable denoted as and two dwell time constants and at the high and low levels, as indicated in Figure 2 e. Statistically, the trapping and detrapping events obey a simple Poisson process from a series of independent abrupt switches whose distributions are quantified by average characteristic times, , and [ 48 ], and the corresponding PSD of the Poisson distribution exhibits a Lorentzian spectrum with = 2.…”
Section: Noise Processesmentioning
confidence: 99%
“…It is natural that the properties and behavior of noise are highly idiosyncratic in each quantum processor architecture, where both classical and quantum fluctuations coexist under Gaussian and non-Gaussian statistics [ 66 ]. Low-frequency behaviors aggravating decoherence are clearly observed in the form of RTSs associated with two-level or quantum fluctuators in materials [ 46 , 47 ], and the noise spectral density in qubit parameters exhibits a power-law trend [ 46 , 66 , 67 ]. The next subsection is devoted to explaining our step-by-step analysis of RTS time tracing method adopting neural network models, which is essential to quantify RTS parameters in complicated signals.…”
Section: Noise Processesmentioning
confidence: 99%