Random Telegraph Noise in Flash Memories

Spinelli, A.S.; Compagnoni, Christian Monzio; Lacaita, A.L.

doi:10.1007/978-3-030-37500-3_6

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2021

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“…Such an idea has been successfully applied to explain the statistical distribution of the RTN fluctuations in NOR and NAND arrays, measured in terms of their amplitude [ 19 , 32 , 33 ] and time constants [ 34 , 35 , 36 ], providing a useful tool for extracting information about the impact of device parameters on RTN. A recent review of the issue can be found in [ 37 ].…”

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confidence: 99%

Random Telegraph Noise in 3D NAND Flash Memories

et al. 2021

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In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

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