Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures

Quang, Doan Nhat; Tuoc, Vu Ngoc; Tung, Nguyen Huyen; Huan, Tran Doan

doi:10.1103/physrevlett.89.077601

Cited by 23 publications

(18 citation statements)

References 17 publications

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“…It should be noted that in distinction from the earlier theories, 17,21,22 we phenomenologically include elastic anisotropy of the wurtzite crystals by incorporation into the Fourier series in Eqs. ͑8͒ and ͑9͒ an anisotropy factor ␣, whose value is to be chosen from experiment.…”

Section: B Stress Field In Actual Heterostructuresmentioning

confidence: 99%

“…In the published papers [17][18][19] we were concerned with heterostructures, where the 2DEG is located in a strained layer. Therefore, we could assume that the strain fluctuations in this layer are most important and to some extent reasonably restrict ourselves to calculate the effect from strain fluctuations only in this layer.…”

Section: B Stress Field In Actual Heterostructuresmentioning

confidence: 99%

“…Recently, it has been pointed out 17 that in zinc-blende heterostructures of cubic symmetry, e.g., InGaAs/ GaAs, interface roughness gives rise to fluctuations of strain in the InGaN strained layer, where the 2DEG located. These in turn induce fluctuations of the piezoelectric polarization and, hence, a fluctuating nonuniform density of bulk piezoelectric charges in the strained layer.…”

Section: Introductionmentioning

confidence: 99%

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Roughness-induced piezoelectric charges in wurtzite group-III-nitride heterostructures

et al. 2005

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We present a theoretical study of the disorder effect due to interface roughness on piezoelectricity in wurtzite group-III-nitride heterostructures, e.g., AlGaN / GaN. We have proved that interface roughness gives rise to random nonuniform fluctuations in the piezoelectric polarization. As a result, besides the uniform density of sheet piezoelectric ͑and spontaneous͒ polarization-induced charges on the interface, reported in the existing literature, there must exist fluctuating densities of bulk piezoelectric charges inside of both the strained and relaxed layers as well as a fluctuating density of sheet piezoelectric charges on the interface. The densities of these charges and their electric field were generally found to be high. The maximal rms density of roughnessinduced bulk charges may be so large as 10 21 e /cm 3 , while the rms density of roughness-induced sheet charges may be of the order of magnitude of the uniform density of sheet piezoelectric charges, up to 10 13 e /cm 2 . Thus, the effects of piezoelectric polarization on the conductivity in actual wurtzite group-III-nitride heterostructures turn out to be counteracting, namely as a source of making up the two-dimensional electron gas, but also as a source of their scattering.

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Section: B Stress Field In Actual Heterostructuresmentioning

confidence: 99%

Section: B Stress Field In Actual Heterostructuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Roughness-induced piezoelectric charges in wurtzite group-III-nitride heterostructures

et al. 2005

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“…The sensitivity for the measurement of electric field thus reaches η e = η σ /( e · Y ). As the coupling between the NV center and the electric field is rather weak compared to the magnetic noise, and because the charge noise decreases rapidly with the distance from the NV center to the piezoactive layer [41], at a distance of e.g. 10 − 15 nm, it is at least three orders of magnitude smaller than the magnetic noise effect considered above (see Supplementary).…”

mentioning

confidence: 90%

Hybrid sensors based on colour centres in diamond and piezoactive layers

Cai¹,

Jelezko²,

Plenio³

2014

Nat Commun

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The ability to measure weak signals such as pressure, force, electric field, and temperature with nanoscale devices and high spatial resolution offers a wide range of applications in fundamental and applied sciences. Here we present a proposal for a hybrid device composed of thin film layers of diamond with color centers implanted and piezo-active elements for the transduction and measurement of a wide variety of physical signals. The magnetic response of a piezomagnetic layer to an external stress or a stress induced by the change of electric field and temperature is shown to affect significantly the spin properties of nitrogen-vacancy centers in diamond. Under ambient conditions, realistic environmental noise and material imperfections, our detailed numerical studies show that this hybrid device can achieve significant improvements in sensitivity over the pure diamond based approach in combination with nanometer scale spatial resolution. Beyond its applications in quantum sensing the proposed hybrid architecture offers novel possibilities for engineering strong coherent couplings between nanomechanical oscillator and solid state spin qubits.Introduction.-The sensitive measurement of signals, such as force, pressure, electric field, temperature, with high spatial resolution possesses a wide range of applications in physics, engineering and the life sciences. Conventional methods, e.g. for pressure detection can usually operate at length scales down to the micron scale. Going beyond this regime whilst retaining highest sensitivity represents a significant challenge.

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“…We supply the 2D Fourier transform of the misfit DP for cubic crystals. The scattering potential associated with the top interface (z = −L/2) is given as follows for electrons: [22]. We may obtain the ACFs for misfit DP scattering for holes in the following form:…”

Section: Iii2 Misfit Deformation Potential (Dp)mentioning

confidence: 99%

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

Anh¹,

Diep²,

Dong³

et al. 2011

Comm. in Phys.

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Abstract. We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

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Random Piezoelectric Field in Real [001]-Oriented Strain-Relaxed Semiconductor Heterostructures

Cited by 23 publications

References 17 publications

Roughness-induced piezoelectric charges in wurtzite group-III-nitride heterostructures

Roughness-induced piezoelectric charges in wurtzite group-III-nitride heterostructures

Hybrid sensors based on colour centres in diamond and piezoactive layers

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

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