RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS

Sapriel, J.; Nissim, Y.I.; Joukoff, B.; Oudar, J; Abraham, Sunila; Beserman, R.

doi:10.1051/jphyscol:1984510

Cited by 3 publications

(2 citation statements)

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“…For the 89 J/cm 2 annealed sample, two weak peaks appear at around 255 and 200 cm -1 , which can be attributed to crystalline arsenic clusters [16]. This suggests that decomposition has occurred to some extent in the near surface region at higher annealing temperature.…”

mentioning

confidence: 91%

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

Gao

Prucnal

Skorupa

et al. 2013

Journal of Applied Physics

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GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 µm which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 µm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 µm emission is from transitions between the V As -donor and X-acceptor pairs.

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mentioning

confidence: 91%

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

Gao

Prucnal

Skorupa

et al. 2013

Journal of Applied Physics

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“…A conventional Raman set up was f i r s t used t o study the annealed semiconductors and t o perform p o l a r i z e d 1 i g h t s c a t t e r i n g i n v e s t i g a t i o n s . The s p a t i a l r e s o l u t i o n was subsequently improved by the use o f a Raman microprobe described i n r e f [ 5 ] w i t h a resolut i o n o f 1 pm.…”

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confidence: 99%

PICOSECOND LASER ANNEALING OF IMPLANTED Si AND GaAs : A COMPARATIVE STUDY WITH A RAMAN MICROPROBE

Sapriel¹,

Nissim²,

Oudar³

1983

J. Phys. Colloques

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The transformation of implanted amorphous Si and GaAs induced by a single pulse of a picosecond laser is studied. In both materials a clear multiannular pattern was produced by the irradiation. The different patterns have been investigated by scanning the surface with a 1 µm spatial resolution Raman microprobe. Sharp transitions between amorphous and cristalline rings are observed for Si. In GaAs the transitions are smoother beetween nearly amorphous and nearly crystalline rings. A multiple melting-resolidification process within the laser pulse duration could explain the formation of these patterns

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Rapid Thermal Processing: A Bibliography

Powell

Manion

1985

MRS Proc.

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This bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

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RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS

Cited by 3 publications

References 0 publications

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

PICOSECOND LASER ANNEALING OF IMPLANTED Si AND GaAs : A COMPARATIVE STUDY WITH A RAMAN MICROPROBE

Rapid Thermal Processing: A Bibliography

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