Raman study of ion irradiated GeSe films

Dwivedi, Prabhat K.; Tripathi, S.; Pradhan, Asima; Kulkarni, V. N.; Agarwal, Samarth

doi:10.1016/s0022-3093(99)00867-4

Cited by 33 publications

(22 citation statements)

References 18 publications

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“…This decrease may indicate that irradiation also increases ordering in the local structures. 59,60 The additional peak at 203 cm À1 for the irradiated Bi/As 2 Se 3 lm (Fig. 11) shows the presence of BiSe vibrational mode which is close to the value reported in ref.…”

Section: Raman Analysissupporting

confidence: 87%

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Behera

Naik

2017

RSC Adv.

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Amorphous chalcogenide semiconducting materials are very sensitive to electromagnetic radiation and are useful for infrared optics and play a pivotal role in modern technology. In the present article, As 2 Se 3 and bilayer Bi/As 2 Se 3 thin films were prepared by thermal evaporation method. The 532 nm laser induced diffusion of active Bi top layer into barrier As 2 Se 3 film was probed through spectroscopic techniques. An X-ray diffraction study reveals no structural change due to laser irradiation while the optical parameters are affected by both Bi addition and laser irradiation which brings a change in the transmittivity and absorption coefficient. The indirect optical band gap is found to be decreased by 0.11 eV due to Bi addition to As 2 Se 3 which is explained on the basis of density of defect states with an increase in disorder.The laser irradiated Bi diffusion increases the optical band gap by 0.05 eV (photobleaching) with a decrease in disorder. The Tauc parameter and Urbach energy which measures the degree of disorder change with Bi doping and irradiation. The refractive index is modified by the illumination process which is useful for optical applications. The optical property change is well supported by X-ray photoelectron core level spectra and Raman spectra.

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Section: Raman Analysissupporting

confidence: 87%

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Behera

Naik

2017

RSC Adv.

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“…The latter peak is accompanied by a shoulder at 215 cm −1 , which rises from the vibrations of Se atoms in the four member rings composed of two edge-sharing (ES) tetrahedra. 27 The intensities difference between the peak and its shoulder clarify that the studied glass has a lot of CS tetrahedra and few ES tetrahedra.…”

Section: Where D I a I And Nmentioning

confidence: 88%

Short-range order of germanium selenide glass

Moharram

2015

Bull Mater Sci

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Chalcogenide Ge 20 Se 80 glass was prepared using the melt-quench technique. The radial distribution function is obtained from X-ray diffraction data in the scattering vector interval 0.28≤K≤ 6.87 Å −1. Reverse Monte Carlo (RMC) simulations are useful to compute the partial pair distribution functions, g ij (r), partial structure factors, S ij (K), and total structure factor. Values of r 1 /r 2 ratio and bond angle () indicate that Ge(Se 1/2) 4 tetrahedra units connected by chains of the chalcogen atoms are present. The partial structure factors have shown that homopolar Ge-Ge and Se-Se bonds are behind the appearance of the first sharp diffraction peak (FSDP) in the total structure factor. Tetrahedral Ge(Se 1/2) 4 structural units connected by Se-Se chains have been confirmed by the simulated values of the partial coordination numbers and bond angle distributions. Finally, Raman spectra measurements have strongly supported the conclusions obtained either from the calculated Fourier data or from RMC simulations.

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“…The glass formation region in the binary Ge-Se system is about 60-90 at% Se, with rest being Ge [14]. GeSe chalcogenide glasses were studied by many authors [13][14][15][16][17][18][19][20][21]. Pan et al, studied the annealing effects on the structure and optical properties of GeSe2 and GeSe4 [15].…”

Section: Introductionmentioning

confidence: 99%

“…They investigated the compositional dependence of the optical properties [20]. Dwivedi et al, studied the change in bonding configurations for GeSe4 films exposed to visible light and irradiated with Krypton ions by using Raman techniques [21]. There is no detailed study on the ac conductivity of GeSe5 glasses.…”

Section: Introductionmentioning

confidence: 99%

AC Conductivity of GeSe5 Chalcogenide Glasses

2016

Egyptian Journal of Solids

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Ac conductivity and dielectric properties of bulk GeSe5 semiconducting glasses were studied in the frequency and temperature range of 50 Hz-5 MHz and 303-483 K, respectively. The XRD confirmed the amorphous nature of GeSe5 semiconducting glasses. Ac conductivity, ac(), as a function of frequency varies as a power law: ac () = A s. Temperature dependence of frequency exponent was analyzed to predict the conduction mechanism, which was found to be correlated barrier hopping model (CBH). Frequency and temperature dependences of dielectric constant and dielectric loss were also investigated. Electric modulus formalism was applied for evaluating the activation energy of the dielectric relaxation process.

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Raman study of ion irradiated GeSe films

Cited by 33 publications

References 18 publications

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Short-range order of germanium selenide glass

AC Conductivity of GeSe5 Chalcogenide Glasses

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Raman study of ion irradiated GeSe films

Cited by 33 publications

References 18 publications

Optical band gap tuning by laser induced Bi diffusion into As2Se3film probed by spectroscopic techniques

Optical band gap tuning by laser induced Bi diffusion into As2Se3film probed by spectroscopic techniques

Short-range order of germanium selenide glass

AC Conductivity of GeSe5 Chalcogenide Glasses

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Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques

Optical band gap tuning by laser induced Bi diffusion into As₂Se₃film probed by spectroscopic techniques