Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy

Wang, J.B.; Li, Z.F.; Chen, P.P.; Lü, Wei; Yao, Takafumi

doi:10.1016/j.actamat.2006.07.031

Cited by 29 publications

(35 citation statements)

References 25 publications

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“…31 In our Raman scattering experiments, the A1(TO) and A1(LO) modes of hexagonal InN were observed at wave numbers of 447 cm -1 and 586 cm -1 together with peaks ascribed to yet unidentified defects at 180 cm -1 and 375 cm -1 . 32,33 The band peaking at 436 cm -1 is due to second-order Raman scattering from the Si substrate. 34 The sharp rise in parts (c, d) of the Figure 12 is due to the wings of the strong Raman peak of the substrate at 520 cm -1 .…”

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). We found a narrow ALD window of 240-260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.

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Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…That means this wafer can be used as the novel substrate for MEMS sensors in the future. Meanwhile, the Raman spectrum is different with Figure 2 c; there are two peaks in Figure 3 c. Because of that, as described in reference [ 19 , 20 ], the phonon characteristic length reduces as the defect density increases. The transverse mode of phonon is an even parity and a Raman active mode, different from longitudinal mode.…”

Section: Resultsmentioning

confidence: 81%

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Shi

Guo²,

et al. 2012

Materials

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Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.

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“…Raman scattering experiments, the A 1 (TO) and A 1 (LO) modes of hexagonal InN were observed at wave numbers of 447 cm -1 and 586 cm -1 together with peaks ascribed to yet unidentified defects at 180 cm -1 and 375 cm -1 . 28,29 The band peaking at 436 cm -1 is due to second-order Raman scattering from the Si substrate. 30 The sharp rise in parts (c, d) of the Figure 13 is due to the wings of the strong Raman peak of the substrate at 520 cm -1 .…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

Deminskyi¹,

Rouf²,

Ivanov³

et al. 2018

Preprint

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<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

show abstract

Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy

Cited by 29 publications

References 25 publications

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

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