Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

Olivares, J.; Martı́n, P.; Rodrı́guez, A.; Sangrador, J.; Jiménez, J.; Rodrı́guez, T.

doi:10.1016/s0040-6090(99)00711-7

Cited by 70 publications

(32 citation statements)

References 12 publications

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“…Furthermore, Si-Ge (~385 cm −1 ) and Si-Si (~450 cm −1 ) peaks represent the Si-Ge and Si-Si bonds of Si x Ge 1-x layers. Peak positions are highly consistent with the linear fit equations acquired with compositional analysis of Si x Ge 1-x layers [19]. Note that, (Si-Si) Raman shift peak of bulk Si is not observed due to poor penetration.…”

Section: Device Fabricationsupporting

confidence: 81%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm 2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. for optical communications," Appl. Phys. Lett. 81(4), 586-588 (2002 ©2012 Optical Society of America

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Section: Device Fabricationsupporting

confidence: 81%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

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“…That is, the number of atoms per unit volume for α-Ge is smaller than that for α-Si, which leads to the Ge fraction below x=0.5 in the case of Ge and Si layers with the same thickness. Based on the Ge composition evaluated from XRD profiles, x=0.46, the Si-Si and Si-Ge peak positions in the Raman spectra were evaluated to be 488 cm −1 and 406 cm −1 , respectively [42,43]. These values are higher than those observed in the spectra (f) and (g) of figure 3, 483 cm −1 and 400 cm −1 , respectively.…”

Section: Resultsmentioning

confidence: 94%

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

et al. 2019

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For realizing high power generator efficiency based on thermoelectricity, Si, Ge and SiGe nanostructures have attracted attention. In this paper, we have investigated a new approach to fabricate an ultrathin polycrystalline SiGe-on-insulator (pc-SGOI) substrate by a simple process based on Si and Ge deposition followed by thermal diffusion suitable for thermoelectric devices. A 45-nmthick SGOI layer with a Ge fraction of nearly 0.45 was fabricated, and the Ge fraction was homogeneous in plane over the layer. Its thermal conductivity was 0.87 W mK −1 , lower than that of a single-crystalline SGOI layer. This is caused by the enhancement of scattering of phonons at grain boundaries in the pc-SGOI layer.

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“…, respectively. [27] The phonon mode of bulk amorphous silicon occurs at ñ = 480 cm À1 and a shift to lower wavenumber indicates the formation of amorphous Si x Ge 1Àx . The GeÀGe peak is also broad and centred at ñ = 280 cm À1 , which corresponds well with the formation of an amorphous phase.…”

Section: Resultsmentioning

confidence: 99%

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

et al. 2015

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In this paper, we show the electrodeposition of both gallium‐doped crystalline germanium and SixGe1−x directly on copper at room temperature from an ionic liquid. Germanium and SixGe1−x were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium‐doped germanium and SixGe1−x. From the microstructure, it appears that Ge and SixGe1−x dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X‐ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium‐doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.

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Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

Cited by 70 publications

References 12 publications

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature

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Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

Cited by 70 publications

References 12 publications

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

Electrodeposition of Crystalline Gallium‐Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature

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Electrodeposition of Crystalline Gallium‐Doped Germanium and Si_xGe_1−x from an Ionic Liquid at Room Temperature