2000
DOI: 10.1016/s0040-6090(99)00711-7
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Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

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Cited by 70 publications
(32 citation statements)
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“…Furthermore, Si-Ge (~385 cm −1 ) and Si-Si (~450 cm −1 ) peaks represent the Si-Ge and Si-Si bonds of Si x Ge 1-x layers. Peak positions are highly consistent with the linear fit equations acquired with compositional analysis of Si x Ge 1-x layers [19]. Note that, (Si-Si) Raman shift peak of bulk Si is not observed due to poor penetration.…”
Section: Device Fabricationsupporting
confidence: 81%
“…Furthermore, Si-Ge (~385 cm −1 ) and Si-Si (~450 cm −1 ) peaks represent the Si-Ge and Si-Si bonds of Si x Ge 1-x layers. Peak positions are highly consistent with the linear fit equations acquired with compositional analysis of Si x Ge 1-x layers [19]. Note that, (Si-Si) Raman shift peak of bulk Si is not observed due to poor penetration.…”
Section: Device Fabricationsupporting
confidence: 81%
“…That is, the number of atoms per unit volume for α-Ge is smaller than that for α-Si, which leads to the Ge fraction below x=0.5 in the case of Ge and Si layers with the same thickness. Based on the Ge composition evaluated from XRD profiles, x=0.46, the Si-Si and Si-Ge peak positions in the Raman spectra were evaluated to be 488 cm −1 and 406 cm −1 , respectively [42,43]. These values are higher than those observed in the spectra (f) and (g) of figure 3, 483 cm −1 and 400 cm −1 , respectively.…”
Section: Resultsmentioning
confidence: 94%
“…, respectively. [27] The phonon mode of bulk amorphous silicon occurs at ñ = 480 cm À1 and a shift to lower wavenumber indicates the formation of amorphous Si x Ge 1Àx . The GeÀGe peak is also broad and centred at ñ = 280 cm À1 , which corresponds well with the formation of an amorphous phase.…”
Section: Resultsmentioning
confidence: 99%