Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Kort, Kenneth R.; Hung, P. Y.; Lysaght, Patrick D.; Loh, Wei‐Yip; Bersuker, G.; Banerjee, Sarbajit

doi:10.1039/c4cp00111g

Cited by 12 publications

(15 citation statements)

References 15 publications

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“…Our sub-10 nm n-In 0.53 Ga 0.47 As junctions also possess similar active carrier concentration of $1.5 Â 10 19 À1.7 Â 10 19 cm À3 . The N and t obtained are similar to that reported by Kort et al 24 Furthermore, the corresponding s values appear to fall on the line extrapolated from the thicker reference samples. R s obtained from electrical measurements using the micro-four-point-probe (l4PP) setup and TLM structures are compared with that obtained from infrared ellipsometry measurements in Fig.…”

supporting

confidence: 88%

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

D'Costa

Subramanian

et al. 2014

Applied Physics Letters

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Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods.

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supporting

confidence: 88%

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

D'Costa

Subramanian

et al. 2014

Applied Physics Letters

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“…12 More recent work has shown that it is possible to study the doping concentration in InGaAs using calibrated Raman spectroscopy and the goal of this work is to similarly apply calibrated Raman spectroscopy to investigate the activation of implanted Si in InAs. [13][14][15] EXPERIMENTAL Commercially available, 500 lm thick, 3 in. Zn-doped InAs wafers with a background p-type concentration of 3 Â 10 17 cm À3 grown using the liquid encapsulated Czochralski process were implanted with 20 keV, Si þ over a range of doses from 1 Â 10 13 to -1 Â 10 15 cm À2 at a 7 tilt and 25 rotation.…”

Section: Introductionmentioning

confidence: 99%

“…Previous authors have used Raman scattering to measure free carrier concentrations making use of the fact that LO phonons will readily couple with the plasma oscillations of free carriers in InAs and other polar, III-V materials. 13,14,[21][22][23][24][25][26][27] The L þ phonon-plasmon coupled mode is especially sensitive to changes in the carrier concentration at high n-type carrier concentrations in InAs where Raman shifts towards higher wavenumbers correspond to increasing free electron concentrations. Diffusion of Si in InAs beyond the initial implanted profile may increase the active sheet number measured by Hall effect precluding accurate carrier concentration estimates without corresponding Si diffusion data.…”

Section: Introductionmentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si þ implants into lightly doped (001) p-type bulk InAs performed at 100 C as a function of annealing time and temperature was measured via Raman scattering. Peak shift of the L þ coupled phonon-plasmon mode after annealing at 700 C shows that active n-type doping levels %5 Â 10 19 cm À3 are possible for ion implanted Si in InAs. These values are comparable to the highest reported active carrier concentrations of 8-12 Â 10 19 cm À3 for growth-doped n-InAs. Raman scattering is shown to be a viable, non-contact technique to measure active carrier concentration in instances where contact-based methods such as Hall effect produce erroneous measurements or junction leakage prevents the measurement of shallow n þ layers, which cannot be effectively isolated from the bulk. V C 2016 AIP Publishing LLC.

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“…[53] The process showed an interesting application of Raman and may prove promising as a method to probe dopant incorporation within shallow junctions formed using the 35 MLD technique. D'Costa and co-workers utilised infrared spectroscopic ellipsometry to study S-MLD doped InGaAs ultra-shallow junctions.…”

Section: Monolayer Doping On Gementioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

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Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Cited by 12 publications

References 15 publications

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Activation of Si implants into InAs characterized by Raman scattering

Chemical approaches for doping nanodevice architectures

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