Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide

Alencar, Rafael S.; Longuinhos, R.; Rabelo, Cassiano; Miranda, Hudson; Viana, Bartolomeu C.; Filho, A. G. Souza; Cançado, Luiz Gustavo; Jório, Ado; Ribeiro-Soares, J.

doi:10.1103/physrevb.102.165307

Cited by 20 publications

(27 citation statements)

References 57 publications

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“…No significant variation in the peaks position can be observed for all modes; similarly, the FWHM variation from thick layers to monolayer is within 1 cm −1 . This negligible dependence of Raman modes on thickness is mainly due to weak inter-layer interactions, and it is consistent with a previous work where it is reported a red-shift in the A 1 1g mode of only 1.4 cm −1 when going from the monolayer (187.6 ± 0.3 cm −1 ) to a 38-nm-thick layer (189.0 ± 0.1 cm −1 ), whereas a constant position within the uncertainty was reported for A 2 1g (Alencar et al, 2020). Similarly, the broadening of all Raman modes is within 1 cm −1 going from monolayer to bulk.…”

Section: Raman and Photoluminescence Spectrasupporting

confidence: 92%

Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

et al. 2021

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Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.

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Section: Raman and Photoluminescence Spectrasupporting

confidence: 92%

Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

et al. 2021

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“…The intensity of all Raman modes decreases with the decrease in thickness; the E 1 2g mode becomes barely visible in the few-layer regime, which is consistent with the trends already reported in the literature [ 25 , 26 ]. The ratio A 1 1g /A 2 1g ~ 1, typical of the single crystals, is preserved for all exfoliated samples, indicating that the layers’ stacking is unaffected by the exfoliation process.…”

Section: Resultssupporting

confidence: 91%

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

et al. 2022

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From the group-III monochalcogenide (MX, M = Ga, In; X = S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm have been obtained by mechanical exfoliation to study the interplay between structural, morphological, optical, and photoresponsivity properties as a function of thickness. This interplay has been established by analyzing the structure through Raman spectroscopy and X-ray diffraction, the morphology through scanning electron microscopy and atomic force microscopy, the density and optical properties through spectroscopic ellipsometry, and the photoresponsivity through current–voltage measurements under UV light. This work shows that photoresponsivity increases with increases in GaS thickness, resulting in a UV photoresponsivity of 1.5·10−4 AW−1 stable over several on/off cycles.

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“…Raman spectra were obtained via a LABRAMs HR Evolution instrument, HORIBA, France, and the visible laser (λ = 532 nm) was used as a probe. There are three Raman active modes, one in-plane mode (E g ), two out-of-plane modes (A g ), as reported in other work [59]. As Figure 1h illustrates, the A 1g (187.5 cm −1 ), A 2g (374.8 cm −1 ), and E 2g (303.75 cm −1 ) vibrational peaks.…”

Section: Apparatus and Characterizationsupporting

confidence: 70%

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Guo

Liu

et al. 2022

Nanomaterials

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Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.

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Raman spectroscopy polarization dependence analysis in two-dimensional gallium sulfide

Cited by 20 publications

References 57 publications

Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

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