Raman spectroscopy of transition metal dichalcogenides

Saito, Riichiro; Tatsumi, Yuki; Huang, Shengxi; Ling, Xi; Dresselhaus, M. S.

doi:10.1088/0953-8984/28/35/353002

Cited by 210 publications

(217 citation statements)

References 94 publications

(185 reference statements)

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“…Figure a shows the comparison of Raman spectra from triangular and dendritic MoS 2 , MoSe 2 , and MoS 2(1− x ) Se 2 x . TMDs show significant and dominating Raman peaks originating from the in‐plane ( E 2g ) and out‐of‐plane ( A 1g ) vibration modes of chalcogens . It is found that there are no significant changes in peak position and line widths of the Raman modes from dendrite to triangle structures of the same alloy composition.…”

Section: Comparison Of Tafel Slopes Of Triangles and Dendritesmentioning

confidence: 95%

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Sharma

Sahoo

Rastogi

et al. 2019

Physica Rapid Research Ltrs

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Shape‐engineered atomically thin transition metal dichalcogenide (TMD) crystals are highly intriguing systems with regard to both fundamental and applied science. Herein, a chemical vapor deposition‐assisted generalized synthesis strategy for the triangular‐ and dendritic‐shaped TMDs and their ternary alloys is proposed, and the TMD structures' potential for electrocatalytic hydrogen evolution reaction (HER) applications is demonstrated. The alloy formation is confirmed via micro‐Raman and photoluminescence studies and further verified using transmission electron microscopy and X‐ray photoelectron spectroscopy. The HER activities of MoS2 and MoSe2 triangles are compared with those of their dendritic structures, and an enormous improvement in terms of overpotential and current density is observed for the dendritic structures. A further enhancement of the HER activity is observed in MoS2(1−x)Se2x triangular and dendritic structures, with dendritic MoS2(1−x)Se2x providing the best activity. The demonstrated nonequilibrium growth technique opens new avenues for the synthesis of morphology‐controlled, large area, complex, and atomically thin TMD structures, which can have unprecedented properties, such as the enormous catalytic activity, tunable luminescence, etc., as presented in this article.

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Section: Comparison Of Tafel Slopes Of Triangles and Dendritesmentioning

confidence: 95%

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Sharma

Sahoo

Rastogi

et al. 2019

Physica Rapid Research Ltrs

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“…Raman spectroscopy has proven to be an important tool in the characterization of low‐dimensional materials and, in particular, in the case of MoS 2 . The first‐order Raman modes of MoS 2 , which involve phonons at the center of the Brillouin zone (BZ), can be used to probe important properties, such as the number of layers, exciton transition energy, stacking effects, interlayer phonons, and defect quantification .…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the double‐resonance Raman bands in monolayer MoS₂

Gontijo

Gadelha

Silveira

et al. 2019

J Raman Spectroscopy

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This work reports a detailed study of the double‐resonance (DR) Raman bands of single‐layer MoS2 as a function of temperature, using many different laser energies in the region of the excitonic transitions and at different temperatures between 80 and 300 K. Our measurements show that the DR bands are strongly affected by temperature and the results are explained in terms of the temperature dependence of both the phonon wavenumber and the excitonic energy. In order to distinguish these two effects, the excitonic transitions were directly measured by photoluminescence as a function of temperature. It was observed from the multiple‐excitation results that the dispersion of the DR bands measured with different laser lines depends on temperature. The resonance condition was evidenced by considering the difference between energies of the laser excitation and the excitonic transition, at a given temperature. Our findings for the temperature dependence of the DR process in single‐layer MoS2 can be extended to other classes of transition metal dichalcogenide materials.

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“…27–29 Similarly, the active Raman modes also depend on the crystal symmetry. 26,37–41 While the Raman properties of the 2H phase have been extensively studied, 10,42,43 the 1T′ phase has not been fully characterized, and there is significant discrepancy in the literature on the Raman modes assignment as well as the number of modes observed. 13,44–50 …”

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confidence: 99%

Characterization of Few-Layer 1T′ MoTe₂ by Polarization-Resolved Second Harmonic Generation and Raman Scattering

et al. 2016

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We study the crystal symmetry of few-layer 1T′ MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T′ MoTe2 is known to be inversion symmetric; however, we find that the inversion symmetry is broken for finite crystals with even numbers of layers, resulting in strong SHG comparable to other transition-metal dichalcogenides. Group theory analysis of the polarization dependence of the Raman signals allows for the definitive assignment of all the Raman modes in 1T′ MoTe2 and clears up a discrepancy in the literature. The Raman results were also compared with density functional theory simulations and are in excellent agreement with the layer-dependent variations of the Raman modes. The experimental measurements also determine the relationship between the crystal axes and the polarization dependence of the SHG and Raman scattering, which now allows the anisotropy of polarized SHG or Raman signal to independently determine the crystal orientation.

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Raman spectroscopy of transition metal dichalcogenides

Cited by 210 publications

References 94 publications

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Temperature dependence of the double‐resonance Raman bands in monolayer MoS₂

Characterization of Few-Layer 1T′ MoTe₂ by Polarization-Resolved Second Harmonic Generation and Raman Scattering

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Raman spectroscopy of transition metal dichalcogenides

Cited by 210 publications

References 94 publications

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

On the Synthesis of Morphology‐Controlled Transition Metal Dichalcogenides via Chemical Vapor Deposition for Electrochemical Hydrogen Generation

Temperature dependence of the double‐resonance Raman bands in monolayer MoS2

Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering

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Temperature dependence of the double‐resonance Raman bands in monolayer MoS₂

Characterization of Few-Layer 1T′ MoTe₂ by Polarization-Resolved Second Harmonic Generation and Raman Scattering