Raman spectroscopy of the internal strain of a graphene layer grown on copper tuned by chemical vapor deposition

Yu, Victor; Whiteway, Eric; Maassen, Jesse; Hilke, Michael

doi:10.1103/physrevb.84.205407

Cited by 55 publications

(53 citation statements)

References 45 publications

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“…The semilog I-V (ln(I) versus V) characteristic is also plotted in Fig. 9 at different temperatures from 40 • C to 160 • C. It is observed that the slopes in the semilog scale is independent of temperature, which is commonly observed in Schottky diodes dominated by tunneling current [50][51][52][53]. This is in contrast to the thermionic emission model predicted by Eq.…”

Section: Sensing Mechanism: G/pt/n-si Junctioncontrasting

confidence: 48%

Nanostructured graphene–Schottky junction low-bias radiation sensors

Serry

Sharaf

Emira

et al. 2015

Sensors and Actuators A: Physical

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Please cite this article in press as: M. Serry, et al., Nanostructured graphene-Schottky junction low-bias radiation sensors, Sens. Actuators A: Phys. (2015), http://dx. a b s t r a c tWe present a key idea of using the graphene-based Schottky junction to achieve high sensitivity and wide detection range radiation sensors. Nanostructured Schottky junction is formed at the interface between a graphene, metal electrode, and a semiconductor. The current flowing through the junction is mainly controlled by the barrier's height and width. Therefore, the detection principle is based on Schottky barrier height (SBH) modulation in response to different materials and stimuli. We have illustrated the concept for gamma (␥) radiation sensors. It's demonstrated that the integration of graphene leads to a great enhancement in sensitivity of up to 11 times coupled with 5 times increase in the sensing range as compared to conventional Schottky junctions. Furthermore, it was demonstrated that for proposed sensors, that the change in SBH could be fairly linearized as a function in the radiation dose unlike the SBH of comparable conventional junctions. The new concept opens the door for a novel class of minitiuarized, low biased, nanoscale radiation sensors for wireless sensor networks. The devices are based on new nanostructured Schottky junctions made by growing graphene on ultrathin platinum catalytic layer grown on different silicon substrates. Graphene high uniformity film with small flakes size embedded with platinum particles was synthesized using two deposition steps. The integration of graphene layers on regular M-S junctions was only possible by using an ALD grown platinum thin film (10-40 nm) and then growing graphene in PECVD at temperatures lower than platinum silicide formation temperature. The radiation sensing behaviors were investigated using two different substrate types. The first substrate type is a moderately doped n-type (n ≈ 2 × 10 15 cm −3 ) silicon substrate in which a Schottky rectifier response with different threshold voltages was observed. A device that is based on Pt/n-Si conventional Schottky junction was used as a reference. The various devices were exposed to a range of ␥-irradiations (2-120 kGy) using Co 60 source, and a change in terminal voltages before and after radiation were measured accordingly. A sensitivity of 3.259 A/kGy cm 2 at 1 V bias over a wide detection range has been realized. The charge transport mechanisms are interpreted on the basis of testing the detectors at elevated temperatures and theoretical models, both of which both verified tunneling as the dominant charge transport in the device. Tunneling allowed the operation of the detectors at low bias voltages with good sensitivity. The detector's realized sensitivity at low bias voltage is a significant advantage, allowing the sensor to operate on a small battery or an energy-harvesting source. This is ideal for low-cost wireless sensor networks.The obtained responses, increase in sensitivity, and increase in detection range, wer...

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Section: Sensing Mechanism: G/pt/n-si Junctioncontrasting

confidence: 48%

Nanostructured graphene–Schottky junction low-bias radiation sensors

Serry

Sharaf

Emira

et al. 2015

Sensors and Actuators A: Physical

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“…Using this technique, they were able to produce samples with carrier mobility of up to 16000 cm 2 V −1 s −1 [18]. In general, the graphene layer is slightly strained on the copper foil due to the high temperature growth [60].…”

Section: Growth On Coppermentioning

confidence: 94%

Experimental Review of Graphene

Cooper

D’Anjou

Ghattamaneni

et al. 2012

ISRN Condensed Matter Physics

502

360

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This review examines the properties of graphene from an experimental perspective. The intent is to review the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene. While some introductory theoretical concepts are provided, including a discussion of the electronic band structure and phonon dispersion, the main emphasis is on describing relevant experiments and important results as well as some of the novel applications of graphene. In particular, this review covers graphene synthesis and characterization, field-effect behavior, electronic transport properties, magnetotransport, integer and fractional quantum Hall effects, mechanical properties, transistors, optoelectronics, graphene-based sensors, and biosensors. This approach attempts to highlight both the means by which the current understanding of graphene has come about and some tools for future contributions.

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“…Using this technique, they were able to produce samples with carrier mobility of up to 16,000 cm 2 V -1 s -1 [147]. Usually, the graphene layer is slightly strained on the copper foil because of the high-temperature growth [148] (Fig. 7).…”

Section: Growth On Cumentioning

confidence: 99%

Synthesis of graphene

et al. 2016

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Graphene, a two-dimensional material of sp 2 hybridization carbon atoms, has fascinated much attention in recent years owing to its extraordinary electronic, optical, magnetic, thermal, and mechanical properties as well as large specific surface area. For the tremendous application of graphene in nano-electronics, it is essential to fabricate high-quality graphene in large production. There are different methods of generating graphene. This review summarizes the exfoliation of graphene by mechanical, chemical and thermal reduction and chemical vapor deposition and mentions their advantages and disadvantages. This article also indicates recent advances in controllable synthesis of graphene, illuminates the problems, and prospects the future development in this field.

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Raman spectroscopy of the internal strain of a graphene layer grown on copper tuned by chemical vapor deposition

Cited by 55 publications

References 45 publications

Nanostructured graphene–Schottky junction low-bias radiation sensors

Nanostructured graphene–Schottky junction low-bias radiation sensors

Experimental Review of Graphene

Synthesis of graphene

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