2021
DOI: 10.1016/j.physb.2020.412492
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Raman spectroscopy of Bi2Se3-xTex (x = 0–3) topological insulator crystals

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Cited by 15 publications
(11 citation statements)
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“…This shifting to lower angle side in XRD pattern is due to doping of Se atom as the Se has a small atomic radius as compared to Te atom. Due to the same reason, there is a huge Raman shift in MTI as compared to TI which is described in our prevoious report [27]. Figure 3 shows SEM images of grown TI and MTI crystals which show that crystals have layered structure which are in direct accordance with the unidirectional growth of crystals.…”
Section: Resultssupporting
confidence: 65%
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“…This shifting to lower angle side in XRD pattern is due to doping of Se atom as the Se has a small atomic radius as compared to Te atom. Due to the same reason, there is a huge Raman shift in MTI as compared to TI which is described in our prevoious report [27]. Figure 3 shows SEM images of grown TI and MTI crystals which show that crystals have layered structure which are in direct accordance with the unidirectional growth of crystals.…”
Section: Resultssupporting
confidence: 65%
“…The Raman spectra have been in direct accordance with the PXRD analysis as there is a shift in Raman mode as we go from Bi2Te3 to Bi2Se3, where MTI lies in between. The reason behind these characteristics Raman shift has been explained in our previous report [27]. Fig.…”
Section: Resultsmentioning
confidence: 53%
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