Raman spectroscopy characterization of InAs self-assembled quantum dots

Galzerani, J. C.; Pusep, Yuri A.

doi:10.1016/s0921-4526(02)00542-2

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…Much work has been devoted to the structural and electronic properties of these nanostructures [2][3][4][5][6]. However, no clear picture of the vibrational properties of the QDs (QWRs) has formed so far from the few experimental studies on the Raman scattering of QDs [7][8][9][10][11][12][13]. It has been reported that phonons can participate in the carrier relaxation of the QDs structure, especially when the splitting of the energy levels in QDs matches a multiple of the QD phonon energy [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

Lei

Chen

et al. 2005

Nanotechnology

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The phonons of self-assembled InAs/InAlAs/InP quantum wires (QWRs) have been studied by Raman scattering. The QWR LO phonons show an unusual frequency shift with the increase of the InAs deposited thickness due to dislocations. The QWR LO phonons are found to follow the selection rule of the LO phonons in bulk zinc-blende semiconductors. Because of the intermixing of In/Al atoms and the multiplication of dislocations, the post-growth thermal annealing treatment leads to a shift of the QWR LO phonons to lower frequency.

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Section: Introductionmentioning

confidence: 99%

Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

Lei

Chen

et al. 2005

Nanotechnology

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“…Raman scattering or resonant Raman scattering has been used to determine local modes in the QD system, like InAs/GaAs QDs [4] , InGaAs/GaAs QDs [5] . Adding Al into QDs can blue-shift the emission wavelength of QDs, which is useful for fabricating QD lasers emitting red light.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of annealed InAlAs quantum dots

Wang¹,

Xu²,

Shu³

et al. 2005

SPIE Proceedings

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Raman spectra of In 0.65 Al 0.35 As quantum dots (QDs) embedded between GaAlAs and GaP have been measured at room temperature. For the as-grown sample, in addition to the TO/LO modes from GaAs substrate, a weak broad peak appears from 165 cm -1 to 203 cm -1 , corresponding to the interface mode of InAlAs QDs. The AlAs-like and GaP-like modes can be clearly seen at 382 cm -1 . For the annealed samples, the AlAs and GaP-like modes disappeared, while the InAs-like modes become stronger, indicating strong intermixing between QDs and the matrix and the formation of uniform InGaAlAsP alloy.

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Large-area self-ordered aluminium sub-micrometre dot arrays prepared by electropolishing on polycrystalline aluminium at constant current

Huang

et al. 2011

Corrosion Science

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Raman spectroscopy characterization of InAs self-assembled quantum dots

Cited by 4 publications

References 3 publications

Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

Raman spectroscopy of annealed InAlAs quantum dots

Large-area self-ordered aluminium sub-micrometre dot arrays prepared by electropolishing on polycrystalline aluminium at constant current

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