Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylene-tetracarboxylic-dianhydride/GaAs heterostructures

Salvan, Georgeta; Ténné, D. A.; Kampen, Thorsten U.; Scholz, Reinhard; Jungnickel, G.; Frauenheim, Th.; Zahn, Dietrich R. T.

doi:10.1016/s0169-4332(01)00272-0

Cited by 15 publications

(9 citation statements)

References 21 publications

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“…The cleaning and the S passivation of GaAs surface consisting of a wet chemical treatment followed by annealing under UHV was described in detail elsewhere. 9 The organic molecules purchased from Lancaster Synthesis and Syntec GmbH and prepurified by two sublimation steps were thermally evaporated in ultrahigh vacuum ͑UHV͒ ͑base pressure ϳ2ϫ10 Ϫ10 mbar) onto freshly prepared 2ϫ1 reconstructed S-GaAs͑100͒ substrates. The evaporation rate was 0.3 nm/min as determined by a quartz microbalance calibrated by means of atomic force microscopy.…”

Section: Methodsmentioning

confidence: 99%

“…8 Recently a study was devoted to the in situ characterization of Ag deposition onto 15 nm thick PTCDA films grown on S-passivated GaAs͑100͒ substrates. 9 Regarding the In interface formation with the perylene derivatives there still is a discrepancy in the literature: PES studies indicate a strong reaction between In and PTCDA via the CvO bonds, 2,10 whereas more recent near edge x-ray absorption fine structure revealed the presence of a fractional charge transfer between the PTCDA or DiMe-PTCDI molecules and In. 11 In this work Raman spectroscopy was employed for the in situ investigation of the interface formation between the metals and organic films with emphasis on the nature of interaction, the interface structure as well as the morphology of the metal films.…”

Section: Introductionmentioning

confidence: 99%

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Interaction between metals and organic semiconductors studied by Raman spectroscopy

Zahn

Salvan

Paez

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Silver and indium were deposited onto molecular layers of two perylene derivatives, viz. 3,4,9,10-perylene-tetracarboxylic dianhydride ͑PTCDA͒ and N,NЈ-dimethylperylene 3,4,9,10-dicarboximide ͑DiMe-PTCDI͒. The interaction between the metals and the organic semiconductors was probed in situ by Raman spectroscopy. The molecular structure is found to be preserved when Ag or In are deposited onto PTCDA and DiMe-PTCDI layers. For In, this is in contrast to previous suggestions of strong reactivity with PTCDA and covalent bond formation between In and O atoms in PTCDA. However, the molecules having direct contact with the metal are involved in a ground state dynamical charge transfer with different strength for Ag and In, resulting in a breakdown of vibrational selection rules. A significant enhancement of Raman internal vibrational modes is observed both for Ag and In deposition as a result of metal-induced surface enhanced Raman scattering ͑SERS͒. The enhancement factors observed for the internal modes reflect a rough morphology of the metal films which is influenced by the morphology of the underlying organic film. Moreover, conclusions regarding the indiffusion of the two metals can be drawn from the comparison of the breakdown of the selection rules for the internal modes and the spectral evolution of the external molecular modes.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interaction between metals and organic semiconductors studied by Raman spectroscopy

Zahn

Salvan

Paez

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…The cleaning and the S-passivation of GaAs surface is described in detail elsewhere [12]. The organic molecules purchased from Lancaster Synthesis and prepurified by two sublimation steps were thermally evaporated in ultra-high vacuum (UHV) (base pressure $2 Â 10 À10 mbar) onto freshly prepared 2 Â 1 reconstructed S-GaAs(1 0 0) substrates.…”

Section: Methodsmentioning

confidence: 99%

“…The deposition of some metals like Ag and In onto organic layers of PTCDA gives rise to an enhancement of the intensity of the normally Raman-active internal vibrational modes, accompanied by the activation of normally infrared-active modes [8,9,12]. This effect is known as surface enhanced Raman scattering (SERS).…”

Section: Introductionmentioning

confidence: 99%

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

Salvan

Zahn

Paez

2004

Journal of Luminescence

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“…The growth of PTCDA by organic molecular beam deposition on GaAs and Si has been monitored by Raman spectroscopy (175). Changes in GaAs bands and PTCDA internal and external vibrational modes indicated interface formation (176).…”

Section: Other Surface Sensitive Methodsmentioning

confidence: 99%

Optical Diagnostics for Thin Film Processing

Herman

2003

Annu. Rev. Phys. Chem.

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Optical diagnostics are used to probe the plasma or neutral gas above the substrate, particles in the gas or on the surface, the film surface and reactor walls, the film itself, and the substrate during thin film processing. The development and application of optical probes are highlighted, in particular for analyzing plasma/gas phase intermediates and products and film composition, and performing metrology, thermometry, and endpoint detection and control. Probing etching (particularly plasma etching) and deposition (particularly epitaxy) are emphasized.

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Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylene-tetracarboxylic-dianhydride/GaAs heterostructures

Cited by 15 publications

References 21 publications

Interaction between metals and organic semiconductors studied by Raman spectroscopy

Interaction between metals and organic semiconductors studied by Raman spectroscopy

Surface enhanced Raman scattering in organic thin films covered with silver, indium and magnesium

Optical Diagnostics for Thin Film Processing

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