Raman spectroscopic study of HgCdTe epilayers for infrared detector array fabrication

Singh, Anand; Pal, R.; Dhar, V.; Pant, S. C.

doi:10.1016/j.infrared.2010.11.002

Cited by 6 publications

(1 citation statement)

References 22 publications

(29 reference statements)

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“…Through the comparison of the Raman diagram, it can be seen that Sample 2 (grown at 151 • C) has fewer defects than Sample 1 (grown at 155 • C), and the crystal quality is better. The FWHMs of TO 1 and LO 1 of Sample 2 are similar to those of the other article [23].…”

Section: Photoluminescence Spectroscopysupporting

confidence: 80%

Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions

Qiu

Zhang

et al. 2021

Crystals

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The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.

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Section: Photoluminescence Spectroscopysupporting

confidence: 80%