Raman spectroscopic analysis on Li, N and (Li,N) implanted ZnO

Mondal, A.; Pal, Srimanta; Sarkar, A.; Bhattacharya, Tara Shankar; Das, Avishek; Gogurla, Narendar; Ray, S. K.; Kumar, Pravin; Kanjilal, D.; Devi, Ksh. Devarani; Singha, Achintya; Chattopadhyay, Sanatan; Jana, Debnarayan

doi:10.1016/j.mssp.2018.02.026

Cited by 32 publications

(18 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After implantation, an asymmetric tailing (higher wave number side) of E 2 low mode is found. This is consistent with earlier observations in ion irradiated, ball milled, disordered ZnO, and ZnO composites . This asymmetric tailing can be a cumulative effect of Raman modes at 120, 144, and 183 cm −1 (Figure a,b).…”

Section: Resultssupporting

confidence: 93%

“…In literature, N‐induced modifications of defects/defect complexes in ZnO have been investigated using different spectroscopic techniques . The Raman mode near 275 cm −1 is known to be due to atomic nitrogen in the vacant oxygen sites (N O ) in ZnO .…”

Section: Introductionmentioning

confidence: 99%

“…Deep electronic levels (~1 eV below conduction band) are generated, which most probably are vacancies. To get rid of unwanted interstitials (I Zn s) and to use left aside V Zn s purposefully, N codoped with Li, Mg, or P is found to be effective for activating shallow acceptors. In case of granular In‐doped ZnO, N can be used to passivate grain boundary defects and a significant decrease in resistivity (~2 × 10 −3 Ω·cm) has been observed .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Mondal

Pal

Sarkar³

et al. 2019

J Raman Spectroscopy

Self Cite

View full text Add to dashboard Cite

Understanding defects, disorder and doping due to N implantation in ZnO is one of the most debated issues for the last few years. In the present work, a comprehensive investigation has been carried out using Raman, photoluminescence (PL) spectroscopy and grazing‐incidence X‐ray diffraction on 50 keV N ions implanted granular ZnO with different fluence (approximately up to 6.5% atomic concentration) along with postimplantation annealing. Raman investigation suggests that 275, 510, 643, and 857 cm−1 modes are directly related to nitrogen. Additionally, VZn may have some role in stabilizing 275 cm−1 mode. The broadening (or tailing) of E2low mode is related to vibration of distorted Zn sublattice, which may be a product of ion implantation generated defect cluster like VZn–VO. The distortion starts to reduce with annealing at elevated temperatures. Direct correlation between 555 cm−1 Raman mode and the tailing of E2low mode has been found. More defect clustering is vivid from the reduced PL of the ZnO samples with increasing implantation fluence. So, tailing of E2low Raman mode, increasing intensity of 555 cm−1 mode and nonradiative defect centers are of common origin. Both the ratios E1(2LO)/E1(LO) and E2high/E1(LO) can be used as parameters to measure the defective nature of ZnO after ion implantation/irradiation. Low temperature PL (selected samples) suggests absence of shallow acceptor states, although negative thermal quenching above 175 K has been observed (implantation fluence 1 × 1016 ions/cm2 and annealed at 500°C) which can be a signature of deep acceptors.

show abstract

Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Mondal

Pal

Sarkar³

et al. 2019

J Raman Spectroscopy

Self Cite

View full text Add to dashboard Cite

show abstract

“…Photoluminescence (PL) spectroscopy is one of the essential tools to examine various defect driven emissions and its probable mechanisms in different semiconductors which in turn can also be used to interpret photocatalytic activity from defect dynamics point of view. The PL spectra of undoped and Ru doped ZnS are shown in Figure .…”

Section: Resultsmentioning

confidence: 99%

Visible LED‐Assisted Effective Charge Separation in Ruthenium‐Doped ZnS System for Efficient Photodegradation of Organic Dye

et al. 2019

View full text Add to dashboard Cite

Harvesting solar light efficiently and effective photo‐induced charge separated photocatalysts becoming an immense demand for environment salvation. Herein, the one‐step solvothermal method has been employed to synthesize Zn1–xRuxS nanoparticles (NPs). A systematic study for the photocatalytic degradation of Methylene blue (MB) for the first time in Ru doped ZnS system has been carried out with visible light (LED) irradiation. Density functional theory has been employed to study the structural, electronic properties and charge transfer mechanism throughout the Ru doped ZnS system. Theoretical results and UV‐Vis spectra suggest a reduction of bandgap as a function of Ru concentration. Bader charge analysis for both the structures as well as photoluminescence quenching has shown Ru acts as a charge center in the charge transfer process. The optimum photodegradation efficiency is achieved in case of 1% Ru doped ZnS NPs. Thus Ru doping in ZnS NPs has a significant role in showing effective photocatalytic behaviour.

show abstract

“…The structural, morphological and optical properties of ZnO can be altered by adding selected impurities to the ZnO lattice. A large number of studies have now been carried out on ZnO doped with different metallic ions, in order to achieve or improve the desired properties [17] [18] [19]. So far, rare earth elements and transition metals have attracted attention thanks to their excellent performance as luminescent centers.…”

Section: Introductionmentioning

confidence: 99%