Raman spectra of titanium dioxide (anatase, rutile) with identified oxygen isotopes (16, 17, 18)

Frank, Otakar; Zukalová, Markéta; Laskova, Barbora; Kürti, J.; Koltai, János; Kavan, Ladislav

doi:10.1039/c2cp42763j

Cited by 434 publications

(263 citation statements)

References 21 publications

(40 reference statements)

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“…4b. The powder is mainly crystalline anatase with traces of rutile, and it clearly exhibits all five expected anatase Raman shifts around 144, 196, 394, 516 and 638 cm −1 [15], with a weak peak and a weak shoulder around the expected rutile Raman shifts at 448 cm −1 and 613 cm −1 [15],respectively. This confirms that the tubes are mostly amorphous, with locally crystallized areas.…”

Section: Resultsmentioning

confidence: 94%

See 1 more Smart Citation

Antimicrobial properties of highly efficient photocatalytic TiO2 nanotubes

Podporska-Carroll

Panaitescu

Quilty

et al. 2015

Applied Catalysis B: Environmental

150

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Section: Resultsmentioning

confidence: 94%

“…6) [13][14][15][16][17][18][19]. The initial reaction starts with the UV light-induced generation of a conduction band electron (e − CB ) and a valence band hole (h + VB ) [1,19].…”

Section: Resultsmentioning

confidence: 99%

Antimicrobial properties of highly efficient photocatalytic TiO2 nanotubes

Podporska-Carroll

Panaitescu

Quilty

et al. 2015

Applied Catalysis B: Environmental

150

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“…The 397, 515 and 145, and 197 and 638 cm −1 bands correspond to the respective B 1g , A 1g + B 1g and E g phonon vibrations of anatase-type TiO 2 [49,[51][52][53]. A weak signal at 793 cm −1 (see the magnified spectrum in Figure 7c) is due to the first overtone of the 395 cm −1 [49,52,53]. Besides these peaks, bands at 882 and 980 cm −1 existed in the WT sample, as provided in the magnified spectrum in Figure 7d.…”

Section: Role Of Fe 2 O 3 Species For the Suppression Of N 2 O Formationmentioning

confidence: 99%

The Role of Fe2O3 Species in Depressing the Formation of N2O in the Selective Reduction of NO by NH3 over V2O5/TiO2-Based Catalysts

Kim

Yang

2018

Catalysts

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Promotion of 2.73% Fe 2 O 3 in an in-house-made V 2 O 5 -WO 3 /TiO 2 (VWT) and a commercial V 2 O 5 -WO 3 /TiO 2 (c-VWT) has been investigated as a cost effective approach to the suppression of N 2 O formation in the selective catalytic reduction of NO by NH 3 (NH 3 -SCR). The promoted VWT and c-VWT catalysts all gave a significantly decreased N 2 O production at temperatures >400 • C compared to the unpromoted samples. However, such a promotion led to the loss in high temperature NO conversion, mainly due to the oxidation of NH 3 to N-containing gases, particularly NO. Characterization of the unpromoted and promoted catalysts using X-ray diffraction (XRD), NH 3 adsorption-desorption, and Raman spectroscopy techniques could explain the reason why the promotion showed much lower N 2 O formation levels at high temperatures. The addition of Fe 2 O 3 to c-VWT resulted in redispersion of the V 2 O 5 species, although this was not visible for 2.73% Fe 2 O 3 /VWT. The iron oxides exist as a highly-dispersed noncrystalline α-Fe 2 O 3 in the promoted catalysts. These Raman spectra had a new Raman signal that could be tentatively assigned to Fe 2 O 3 -induced tetrahedrally coordinated polymeric vanadates and/or surface V-O-Fe species with significant electronic interactions between the both metal oxides. Calculations of the monolayer coverage of each metal oxide and the surface total coverage are reasonably consistent with Raman measurements. The proposed vanadia-based surface polymeric entities may play a key role for the substantial reduction of N 2 O formed at high temperatures by NH 3 species adsorbed strongly on the promoted catalysts. This reaction is a main pathway to greatly suppress the extent of N 2 O formation in NH 3 -SCR reaction over the promoted catalysts.

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“…This appears counterintuitive, as an increase in oxide thickness would exponentially reduce tunneling current. 16,17 On the other hand, the 5-nm-thick films were found to be amorphous. We note that the blueshift and broadening of the FWHM of the E 1 g mode may also be attributed to a combined mechanism involving both phonon confinement and non-stoichiometry effects.…”

Section: Resultsmentioning

confidence: 98%

Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures

Chin¹,

Amani²,

O'Regan³

et al. 2015

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302 Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)Aug 2015 PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) US Army Research Laboratory ATTN: RDRL-SER-L 2800 Powder Mill Road Adelphi, MD 20783-1138 PERFORMING ORGANIZATION REPORT NUMBER ARL-TR-7399 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTThe effect of titanium oxide (TiO2) thickness on hysteresis behavior in non-volatile, metal-insulator-metal resistive random access memory (RRAM) was investigated using a Zr40Cu35Al15Ni10 (ZCAN) amorphous metal bottom electrode and an indium (In) top electrode. Due to the atomically flat nature of the amorphous ZCAN contact, the switching behavior of very thin metal oxides can be more accurately measured, unlike in aluminum (Al) or titanium (Ti) films, which typically have a surface roughness that is on the same order of magnitude as the dielectric thickness. TiO2 grown by atomic layer depositions (ALD) was used as the dielectric layer and has previously been used with platinum (Pt) electrodes to demonstrate RRAM devices with high on/off ratios. We found that at higher thickness, the ALD TiO2 transforms from an amorphous film to an anatase film, which plays a critical role for the hysteresis and switching characteristics in these devices.

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Raman spectra of titanium dioxide (anatase, rutile) with identified oxygen isotopes (16, 17, 18)

Cited by 434 publications

References 21 publications

Antimicrobial properties of highly efficient photocatalytic TiO2 nanotubes

Antimicrobial properties of highly efficient photocatalytic TiO2 nanotubes

The Role of Fe2O3 Species in Depressing the Formation of N2O in the Selective Reduction of NO by NH3 over V2O5/TiO2-Based Catalysts

Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures

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