Raman scattering study of wurtzite and rocksalt InN under high pressure

Pinquier, C.; Demangeot, F.; Frandon, J.; Chervin, J. C.; Polian, A.; Couzinet, B.; Munsch, P.; Briot, Olivier; Ruffenach, Sandra; Gil, Bernard; Maleyre, B.

doi:10.1103/physrevb.73.115211

Cited by 54 publications

(67 citation statements)

References 39 publications

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“…[4][5][6][7] Pinquier and coworkers 4,5 investigated the pressure dependence of the E 2h , A 1 (TO), and LO phonons of w-InN. Pressure coefficients and mode Grüneisen parameters were obtained for these phonon modes, and the wurtzite-to-rocksalt transition was found to lie in the 12-14 GPa range, in agreement with x-ray diffraction measurements 8 and with the predictions of ab initio calculations.…”

Section: Introductionsupporting

confidence: 52%

“…5,6 This can be observed in Fig. 5 for the case of sample C. In the spectrum obtained at 12.1 GPa, it can be seen that the phonons of w-InN coexist with new bands that are assigned to rs-InN.…”

Section: Raman Scattering In Rs-innmentioning

confidence: 64%

“…The Raman spectra plotted in the figure are very similar to those of previous works. 5,6 In Ref. 5, were Raman measurements of rs-InN were performed up to 50 GPa, it was found that features D and D merge above 30 GPa.…”

Section: Raman Scattering In Rs-innmentioning

confidence: 99%

“…5,6 In Ref. 5, were Raman measurements of rs-InN were performed up to 50 GPa, it was found that features D and D merge above 30 GPa. It must be noted that similar Raman spectra were also measured in GaN 33 and AlN 36 above 30 and 20 GPa, respectively.…”

Section: Raman Scattering In Rs-innmentioning

confidence: 99%

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High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

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We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L − coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k · p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

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Section: Introductionsupporting

confidence: 52%

Section: Raman Scattering In Rs-innmentioning

confidence: 64%

Section: Raman Scattering In Rs-innmentioning

confidence: 99%

Section: Raman Scattering In Rs-innmentioning

confidence: 99%

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High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

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“…The transition pressure depends on the following factors: (a) the bulk modulus B 0 (the larger B 0 , the larger P t ) and (b) the difference in equilibrium volumes ∆V 0 for different phases (the larger ∆V 0 , the smaller P t ) [18]. According to Table II, our results in various approximations are less than the values obtained by Shi et al [19], which indicate that our results are more favorable than their results because as the atomic radius increases the pressure at which phase transition occurs should decrease [20]. …”

Section: Structural Propertiescontrasting

confidence: 55%

A Comparison of the~Structural, Electronic, Optical and Elastic Properties of Wurtzite, Zinc-Blende and Rock Salt TlN: A DFT Study

et al. 2016

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In this article we investigated structural, electronic, elastic, and optical properties of TlN in three phases, using full potential linear augmented plane wave method in the density functional theory frame with WIEN2k code. The calculations have been done in the generalized Perdew-Burke-Ernzerhof generalized gradient approximation, the generalized Wu-Cohen gradient approximation, the generalized Perdew-Burke-Ernzerhof solid gradient approximation, local density approximation, and the modified Becke-Johnson approximations. In spite of the absence of any experimental data for TlN, our results are compared with other results achieved by other different approximations which shows a good agreement with them. The band gap for TlN in wurtzite and zinc-blende are obtained to be 0.07 and 0.09 eV within modified Becke-Johnson-local density approximation+spin-orbit approximation, respectively. The structural properties such as phase transitions, equilibrium lattice parameters, bulk modulus and its first pressure derivative were obtained using an optimization method. Moreover, we calculated quantities such as elastic constants, the Young modulus, shear modulus, the Poisson ratio, and sound velocities for longitudinal and transverse waves, the Debye temperature and the Kleinman parameters in different approximations and we show that TlN is softer than other nitrides of the III-group. The static calculations predicted that wurtzite to rock salt and zinc-blende to rock salt phase transitions occur at 14.7 GPa and 15.8, respectively. The optical properties of TlN in three phases, calculated in generalized gradient approximation and local density approximation and imaginary part of dielectric function show that TlN in wurtzite and zinc-blende phases have semiconductor properties but rock salt phase do not show. As well as, we investigate the influence of the hydrostatic pressure on the elastic parameters and energy band structures for TlN (zinc-blende) within local density approximation.

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Raman probe to estimate surface energies of embedded semiconductor nanostructures

Dhara

Magudapathy

Nair

et al. 2009

J Raman Spectroscopy

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Embedded semiconductor nanoclusters (nc-) of GaN, Si and InN were grown using the ion-implantation technique and subsequent annealing. Detailed phonon properties were studied for the identification of the grown phases as well as to estimate the stress developed in these embedded structures. The surface energies of the embedded nanoclusters were calculated in analogy with the stressed spherical nanoclusters and excess pressure in a liquid drop. The estimated surface energies for nc-GaN ∼4 Nm −1 , nc-InN ∼2.7 Nm −1 and nc-Si ∼1.4 Nm −1 are discussed in the light of possible phase transition in the nanocrystalline systems.

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Raman scattering study of wurtzite and rocksalt InN under high pressure

Cited by 54 publications

References 39 publications

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

A Comparison of the~Structural, Electronic, Optical and Elastic Properties of Wurtzite, Zinc-Blende and Rock Salt TlN: A DFT Study

Raman probe to estimate surface energies of embedded semiconductor nanostructures

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