Raman scattering study of ion implanted and C.W.-Laser annealed polycrystalline silicon

Nakashima, S.; Oima, S.; Mitsuishi, Akiyoshi; Nishimura, Tadashi; Fukumoto, T.; Akasaka, Y.

doi:10.1016/0038-1098(81)90825-5

Cited by 38 publications

(9 citation statements)

References 4 publications

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“…We must exclude the possibility that this spatial variation is caused by material inhomogeneities that affect the local phonon modes, as we observe no variation in Raman spectra at the lower laser power. In addition, such material inhomogeneities (e.g., impurities, 42 defects, 43 phonon confinement, 44,45 surfacemodes 46 ) would all be expected to give rise to an asymmetric Raman peak, which we do not observe. Similarly, homogeneous stress (beneath the probe laser) should be expected to lead to shifts in x peak that are uncorrelated 2 with C. Again, this is not consistent with our observations.…”

mentioning

confidence: 39%

Effect of temperature and micro-morphology on the Ag Raman peak in nanocrystalline CuO thin films

Ravi

Kaiser

Bumby

2015

Journal of Applied Physics

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Raman spectra obtained from a nanocrystalline CuO thin film are observed to exhibit significant variation in the peak position and peak line-shape as a function of spatial position within the film. We attribute this effect to variation in the degree of local heating beneath the focused spot of the Raman probe laser. To understand this, we have undertaken a detailed study of the temperaturedependence of the CuO A g Raman peak. We observe a linear relationship between line-width and peak position, which persists over a wide temperature range, and is characteristic of a Raman process in which the temperature-dependence is dominated by anharmonic 3-phonon decay. We provide an analytical description of the Raman line-shape as a function of temperature and use this model to interpret the degree of laser heating observed within our sample. Using this relationship, we identify that the local micro-morphology of the CuO sample under study can dramatically affect the temperature achieved due to laser heating. We find that spectra collected from the surface of "micro-bubbles" within the CuO film studied can reach temperatures of >1000 K beneath the focused spot of our low power (5 mW) probe laser.

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mentioning

confidence: 39%

Effect of temperature and micro-morphology on the Ag Raman peak in nanocrystalline CuO thin films

Ravi

Kaiser

Bumby

2015

Journal of Applied Physics

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“…However, the tensile stress remains constant in regions far from the interface due to the pinning effect of surrounding silicon. 3,25 The bandwidth changes discontinuously around dϭ150 and 230 nm, as indicated by the arrows in Fig. 4.…”

Section: ͑2͒mentioning

confidence: 96%

Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on SiO2 insulators

Mizoguchi

Nakashima

Sugiura

et al. 1999

Journal of Applied Physics

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The crystallinity of laser-recrystallized Si films on insulators ͑SOI films͒ was characterized by micro-Raman imaging. A small-angle bevel made by angle lapping of the SOI film was used to probe the structure at different depths. The Raman signals that varied with the position along the tilt show that interference of both the incident and scattered light induced in the angle-lapped specimens results in periodic enhancements in the intensity as a function of film thickness. An analysis of the fringe patterns in the Raman images provides us with depth profiles of strain and structural disorders with a high depth resolution on a scale of a few tens of nanometers. When moving away from the interface between the silicon film and the insulator, the peak frequency of the polycrystalline silicon band shifts to the lower frequency side and the band width becomes smaller. The depth profile of the Raman feature shows that the defect density is high in the region near the interface of Si and SiO 2 , and that the stress increases toward the top surface of the silicon film. Moreover, a partial relaxation of the stress occurs near the interface region due to the generation of a high density of defects.

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“…It is well known that the electronic structure and optical response of nanoscale systems such as nanowires (NWires) or nanocrystals (NCs) is a function of lattice strain which is routinely measured by Raman and Fourier transform infra-red (FT-IR) spectroscopy to probe phononic spectra (Jaccodine & Schlegel, 1966;Anastassakis et al, 1970;Nakashima et al, 1981;Boyd & Wilson, 1982, 1987. Such spectra are sensitive to lattice strain which is a function of the material via the Young's modulus (Elliot, 1998).…”

Section: Introductionmentioning

confidence: 99%

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

König

Smith

2019

Acta Crystallogr B Struct Sci Cryst Eng Mater

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Semiconductor nanowires (NWires) experience stress and charge transfer from their environment and impurity atoms. In response, the environment of a NWire experiences a NWire stress response which may lead to propagated strain and a change in the shape and size of the NWire cross section. Here, geometric number series are deduced for zincblende‐ (zb‐) and diamond‐structured NWires of diameter dWire to obtain the numbers of NWire atoms NWire(dWire[i]), bonds between NWire atoms Nbnd(dWire[i]) and interface bonds NIF(dWire[i]) for six high‐symmetry zb NWires with the low‐index faceting that occurs frequently in both bottom‐up and top‐down approaches of NWire processing. Along with these primary parameters, the specific lengths of interface facets, the cross‐sectional widths and heights and the cross‐sectional areas are presented. The fundamental insights into NWire structures revealed here offer a universal gauge and thus could enable major advancements in data interpretation and understanding of all zb‐ and diamond‐structure‐based NWires. This statement is underpinned with results from the literature on cross‐section images from III–V core–shell NWire growth and on Si NWires undergoing self‐limiting oxidation and etching. The massive breakdown of impurity doping due to self‐purification is shown to occur for both Si NWires and Si nanocrystals (NCs) for a ratio of Nbnd/NWire = Nbnd/NNC = 1.94 ± 0.01 using published experimental data.

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Raman scattering study of ion implanted and C.W.-Laser annealed polycrystalline silicon

Cited by 38 publications

References 4 publications

Effect of temperature and micro-morphology on the Ag Raman peak in nanocrystalline CuO thin films

Effect of temperature and micro-morphology on the Ag Raman peak in nanocrystalline CuO thin films

Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on SiO2 insulators

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

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