Raman scattering studies in dilute magnetic semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Zn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Co</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:math>

Samanta, K.; Bhattacharya, P.; Katiyar, Ram S.; Iwamoto, W.; Pagliuso, P. G.; Rettori, C.

doi:10.1103/physrevb.73.245213

Cited by 209 publications

(97 citation statements)

References 33 publications

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“…The peaks in the range of 780-1,000 cm -1 are mainly due to the ZnO and impurity phases of V doping. In lower wave number region, the peak at 330 cm -1 corresponds to transverse optical (TO) phonons of A 1 mode which is second order Raman mode (Samanta et al 2006). Some defects like oxygen vacancies, Zn interstitials give rise to A 1 mode.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Structural, optical and ferroelectric properties of V doped ZnO

et al. 2013

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Present work reports the structural, optical and ferroelectric properties of vanadium doped ZnO samples synthesized via solid state reaction method. X-ray diffraction (XRD) study confirms the presence of hexagonal wurtzite phase and the slight changes in lattice parameters is observed after V doping in host ZnO and impurity oxide of ZnV 2 O 6 . Presence of E 1 and E 2 modes in Raman spectroscopy of V doped ZnO indicates the stability of the wurtzite structure of ZnO, which is consistent with the XRD results. UV-Vis spectroscopy results show decrease in band gap of ZnO from 3.35 to 3.24 eV for 1 % V doped sample, whereas it increases with the V doping and increase in the impurity of ZnV 2 O 6 . Furthermore, it is observed that the ferroelectric polarisation of ZnO improves by V doping. Above results show that one need to consider the presence of ZnO in composite form of oxides of Zn and V and not as a pure V doped ZnO system.

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Section: Raman Spectroscopymentioning

confidence: 99%

Structural, optical and ferroelectric properties of V doped ZnO

et al. 2013

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“…The weak and broad phonon modes at 330, 380 and 585 cm −1 are also observed in Fig. 3 which corresponds to multiphonon mode; M (2E 2 ), 26 A 1 (TO) 26 and E 1 (LO) 27 respectively. The Raman modes corresponding to the sapphire substrate are marked by 'S' in Fig.…”

Section: Resultsmentioning

confidence: 82%

Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

et al. 2015

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Transition from room temperature diamagnetic to ferromagnetic state in N doped ZnO (ZnO:N) films grown by pulsed laser deposition with tunable energy density has been identified. ZnO:N films deposited with moderate laser energy density of 2.5 J/cm2 are single phase and nearly defect free having N dopant substitution at O sites in ZnO lattice, exhibiting intrinsic ferromagnetism. When energy density reduces (<2.5 J/cm2), defects in ZnO:N film degrades ferromagnetism and exhibit diamagnetic phase when grown at energy density of 1.0 J/cm2. Growth kinetics, which in turn depends on laser energy density is playing important role in making transition from ferromagnetic to diamagnetic in ZnO:N films.

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“…It is widely believed that the secondary crystal phases can be expected for ZnO containing at least 5% of Co. The presence of such precipitates as Co or CoO has been found in bulk samples (x = 0.05 [7]), various cobalt oxides or cobalt spinel have been found or suggested in selected mixed crystal layers (x > 0.05 [8]). Several local vibrational modes (LVMs) corresponding to sharp structures in the Raman spectra are expected for a TM impurity occupying a substitutional site in the crystal lattice (see, e.g., [9,10]).…”

Section: Introductionmentioning

confidence: 99%