2009
DOI: 10.1380/ejssnt.2009.107
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Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Abstract: By conducting a 1200 • C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a graphene layer on a Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that the film mostly consists of a two-layer graphene. The peak position is blue-shifted from that of a free-standing graphene formed by a mechanical exfoliation method, suggesting a compressive stress in the film.

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Cited by 69 publications
(70 citation statements)
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“…Such an 'epitaxial graphene on Si substrates' could be possible if high-quality and appropriate crystal orientation of SiC is able to be grown on Si substrates. Using this approach, we demonstrated the first epitaxial graphene on Si substrates and confirmed few layers of graphene (FLG) were successfully formed [17,18]. In this paper, backgate field-effect transistors using the epitaxial graphene on Si substrates are demonstrated.…”
Section: Introductionmentioning
confidence: 89%
“…Such an 'epitaxial graphene on Si substrates' could be possible if high-quality and appropriate crystal orientation of SiC is able to be grown on Si substrates. Using this approach, we demonstrated the first epitaxial graphene on Si substrates and confirmed few layers of graphene (FLG) were successfully formed [17,18]. In this paper, backgate field-effect transistors using the epitaxial graphene on Si substrates are demonstrated.…”
Section: Introductionmentioning
confidence: 89%
“…The sample used in this experiment is heteroepitaxial graphene film grown on a 3C-SiC (110) thin film heteroepitaxially grown on a 300-μm thick Si(110) substrate via thermal graphitization of the SiC surface [17][18][19]. In the Raman spectrum of the graphene film, the principal bands of graphene, namely, the G (1595 cm −1 ) and G' (2730 cm −1 ) bands, are observed, as shown in Fig.…”
Section: Equationmentioning
confidence: 99%
“…The sample used in this experiment is heteroepitaxial graphene film grown on a SiC(110) thin film heteroepitaxially grown on a Si(110) substrate via thermal graphitization of the SiC surface [52][53][54]. In the Raman spectrum of the graphene film, the principal bands of graphene, namely, the G (1595 cm −1 ) and G′ (2730 cm −1 ) bands, are observed as shown in Fig.…”
Section: Observation Of Stimulated Thz Emissionmentioning
confidence: 99%