Raman scattering of graphene‐based systems in high magnetic fields

Abstract

We review the different results obtained in the last decade in the field of Raman scattering of graphene-based systems, with an applied magnetic field. Electronic properties of graphene-based systems with an applied magnetic field are first described. The phonon response in magnetic field, the magneto-phono resonance, is then introduced and described for graphene monolayer and multilayer, as well as for bulk graphite. Electronic Raman scattering are then discussed in the context of Landau level spectroscopy, of electron-phonon interaction and of electron-electron interaction.

Many-body filling factor dependent renormalization of Fermi velocity in graphene in strong magnetic field

“…Thus our model predicts plateaus in all weighted transition energies Ω n+1 at −2 < ν < 2. Similar conclusions about existence of the electron-hole asymmetry (15) and the conjugation property (16) were made in the recent theoretical work [25], which considers transition energies in the Hartree-Fock approximation.…”

“…with the bare Fermi velocity v F replaced by the renormalized velocity v * F . While the former one, v F , should be close to 0.85 × 10 6 m/s, as indicated by fitting theoretical calculations to various experimental data on graphene (see, e.g., [29][30][31][32]), the latter one, v * F , range from 10 6 m/s to 1.4 × 10 6 m/s depending on carrier density, magnetic field and substrate material [9][10][11][12][13][14][15][16]. The existing theory describes renormalization of Fermi velocity in magnetic field with reasonable accuracy in the Hartree-Fock [15,[22][23][24] and static random-phase [26,29,33] approximations.…”

Recent advances in linear and nonlinear Raman spectroscopy. Part XIII

“…Faugeras and co‐workers described Raman scattering of graphene‐based systems in high magnetic fields. These authors reviewed the various results obtained in the last decade in the field of Raman scattering of graphene‐based systems, with an applied magnetic field . Froehlicher et al described rigid‐layer Raman‐active modes in N‐layer transition metal dichalcogenides by interlayer force constants and hyperspectral Raman imaging.…”

“…Jorio presented a dedication to the life‐long contributions of Mildred S. Dresselhaus (1930–2017) in the same special issue of JRS highlighting her contributions to our understanding of graphite, graphite intercalated compounds, graphite ion‐implantation, graphite fibers, fullerenes, carbon nanotubes, and two‐dimensional systems, starting from graphene . Other reviews in the special issue on graphene and related 2D materials, previously described above, were the following: Beams on Tip‐enhanced Raman scattering of graphene ; Faugeras and co‐workers on Raman scattering of graphene‐based systems in high magnetic fields ; Bendiab et al on Unravelling external perturbation effects on the optical phonon response of graphene ; Lee and Cheong on Resonance Raman effects in transition metal dichalcogenides ; Machon et al on Raman scattering studies of graphene under high pressure ; and Ribeiro and co‐workers on the Raman spectroscopy in black phosphorus . Huang and colleauges provided a conference report from the 5th International Taiwan Symposium on Raman Spectroscopy (2017) and Taiwan Association of Raman Spectroscopy Summer Camp .…”

“…These authors reviewed the various results obtained in the last decade in the field of Raman scattering of graphene-based systems, with an applied magnetic field. [88] Froehlicher et al described rigid-layer Raman-active modes in N-layer transition metal dichalcogenides by interlayer force constants and hyperspectral Raman imaging. Materials considered were trigonal prismatic (such as MoSe 2 , MoTe 2 , WS 2 , and WSe 2 ) and distorted octahedral (such as ReS 2 and ReSe 2 ) phases.…”