2010
DOI: 10.1134/s1063783410090106
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Raman scattering in mosaic silicon carbide films

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Cited by 25 publications
(12 citation statements)
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“…In Figure 5 c, the Raman spectrum of bare SiC NWs revealed the TO and LO phonon modes at 797 cm −1 and 973 cm −1 , respectively, which are the characteristics of 3C-SiC. The LO peak is convoluted with the Raman response from the silicon substrate, as expected [ 36 , 51 , 59 ]. Extremely weak peaks around the positions of the D and G bands of graphene are observed for the bare 3C-SiC NWs, showing a negligible extent of unintended graphitization of the wires.…”
Section: Resultssupporting
confidence: 67%
“…In Figure 5 c, the Raman spectrum of bare SiC NWs revealed the TO and LO phonon modes at 797 cm −1 and 973 cm −1 , respectively, which are the characteristics of 3C-SiC. The LO peak is convoluted with the Raman response from the silicon substrate, as expected [ 36 , 51 , 59 ]. Extremely weak peaks around the positions of the D and G bands of graphene are observed for the bare 3C-SiC NWs, showing a negligible extent of unintended graphitization of the wires.…”
Section: Resultssupporting
confidence: 67%
“…This situation can apparently be observed for relatively large particles synthesized at 1350 °C and above. After annealing, the fine structure described above transforms into an asymmetric line with a maximum at 971 cm −1 , which coincides with the frequencies of the LO (Г) phonons in undoped 3C SiC [38]. Thus, the tuning of the high-frequency LO peak component in Figure 3F corresponds to the transition from a mixed phonon-plasmon mode in the 3Cdoped SiC, to scattering by conventional LO (Г) phonons in the pure 3C SiC [39].…”
Section: Raman Spectra and Ir Transmissionmentioning
confidence: 61%
“…The narrow band with a maximum at 519 cm −1 and two secondary bands at 300 and 940-1000 cm −1 with weak intensity, corresponded to the silicon vibrations, 28 were registered on the Si/graphite ( Figure 4a, specter 1) and Si/Ag (Figure 4a, specter 2) interfaces of samples, obtained at 973 K. Besides, there were the weak intensity bands in the range of 620 cm -1 and 1121 cm -1 , corresponding to the Si-O bonds vibration in the thin SiO x films. 29,30 In the high-frequency range of specter 1 the bands with maximum at 1350 cm -1 and 1600 cm -1 were recorded, which correspond to the sp 2 and sp 3 oscillations of the coupled carbon atoms, respectively.…”
Section: Resultsmentioning
confidence: 99%