Raman scattering in lead selenide films at a low excitation level

Kuzivanov, Michail; Zimin, S. P.; Fedorov, Anatoly V.; Баранов, А. В.

doi:10.1134/s0030400x15120140

Cited by 10 publications

(17 citation statements)

References 23 publications

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“…However, Raman spectra obtained for the PbSe QDs of the same size, synthesized by cation-exchange and direct hot-injection methods, demonstrate similar behavior. The positions of phonon peaks were determined and compared to the known literature data [ 73 , 74 , 75 , 76 ]. The positions of the typical phonon peaks (LA(X), 2TA(X), LO(X) and/or LA(X)/TA(X), 2TO(X), and LO(Γ)) are close for both types of QDs and PbSe NPLs (see Table S1 , Supplementary Materials ).…”

Section: Discussionmentioning

confidence: 99%

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

et al. 2020

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Semiconductor colloidal nanoplatelets (NPLs) are a promising new class of nanostructures that can bring much impact on lightning technologies, light-emitting diodes (LED), and laser fabrication. Indeed, great progress has been made in optimizing the optical properties of the NPLs for the visible spectral range, which has already made the implementation of a number of effective devices on their basis possible. To date, state-of-the-art near-infrared (NIR)-emitting NPLs are significantly inferior to their visible-range counterparts, although it would be fair to say that they received significantly less research attention so far. In this study, we report a comprehensive analysis of steady-state and time-dependent photoluminescence (PL) properties of four monolayered (ML) PbSe NPLs. The PL measurements are performed in a temperature range of 78–300 K, and their results are compared to those obtained for CdSe NPLs and PbSe quantum dots (QDs). We show that multiple emissive states, both band-edge and trap-related, are responsible for the formation of the NPLs’ PL band. We demonstrate that the widening of the PL band is caused by the inhomogeneous broadening rather than homogeneous one, and analyze the possible contributions to PL broadening.

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Section: Discussionmentioning

confidence: 99%

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

et al. 2020

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“…Raman spectra of the reference PbSe film reveals characteristic PbSe longitudinal and transverse optical phonons, which have been previously reported in similar MBE grown PbSe films. 21 Figure 5 shows that, for PbO x Se 1−x films, singular peaks at the LO, 2LO, and 2TO peak positions were present, while no individual phonon mode contribution from either PbSe or PbO was detected.…”

Section: Resultsmentioning

confidence: 99%

Growth Study of New Complex Oxide PbO_xSe_1–x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy

McDowell

Qiu

Weng

et al. 2019

Crystal Growth & Design

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In this work, we introduce the growth of a new complex oxide lead oxy-chalcogenide (PbO x Se 1−x ) thin film using an oxygen plasma-assisted molecular beam epitaxy method. Freshly cleaved BaF 2 (111) wafers were used as the substrates for this growth study. Systematic characterization of X-ray diffraction peaks, Raman shifts, absorption spectra, scanning electron microscopic imaging, and Hall measurements were conducted to elucidate the structural, optical, and electric properties of the as-grown PbO x Se 1−x thin films. Specifically, X-ray diffraction measurements revealed that PbO x Se 1−x films maintained the same rock-salt crystal structure as the PbSe semiconductor, but a slight shift in the lattice parameter was observed. A blue shift in the optical absorption edge also suggests that the inclusion of oxygen atoms led to the formation of a ternary compound crystal structure. Furthermore, all PbO x Se 1−x thin films were observed to be polycrystalline in nature and displayed preferred [100] orientated grains. Slight variations in LO and TO phonon peak positions were also observed under Raman spectroscopy, signifying the presence of lead−oxygen bonding. This new type of complex oxide thin film has never been reported and could potentially be used to develop advanced optoelectronic devices, including mid-infrared photodetectors and light-emitting devices.

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“…The procedure of measurement of spectra was specific in that the power density of excitation radiation was minimized without sacrificing the Raman signal intensity. This was achieved using a special Renishaw Streamline TM Plus system [22]. Instead of being focused into a usual spot with a diameter of ∼ 2 µm, excitation radiation with a power of 6 mW was focused in this case into a band ∼ 1 × 50 µm in size.…”

Section: Methodsmentioning

confidence: 99%

“…It was demonstrated in our earlier studies [22,23] that photooxidation processes in lead chalcogenides PbTe, Pb 1−x Eu x Te (x ≤ 0.10), PbSe, Pb 1−x Sn x Se (x ≤ 0.06) and Pb 1−x Eu x Se (x ≤ 0.16) may be minimized by lowering the excitation level. This made it possible to observe, in accordance with theoretical predictions, only overtones and combination tones of phonons at special points of the Brillouin zone in Raman spectra of epitaxial films with a high degree of structural perfection.…”

Section: Introductionmentioning

confidence: 93%

“…This is largely attributable to strong photooxidation and thermal effects induced under the influence of a laser beam in the process of measurement of Raman spectra. Photodestruction processes for lead sulfide and related chalcogenide materials PbTe and PbSe have been examined in detail by RS in [16][17][18][19][20][21][22]. Literature data on Raman spectra of lead sulfide suggest that, in disregard of the fact that first-order Raman scattering was predicted to be forbidden, sufficiently intense Raman bands are often associated with transverse (TO) and longitudinal (LO) phonons (see [10][11][12] and other studies).…”

Section: Introductionmentioning

confidence: 99%

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Features of Raman scattering in lead sulfide and lead sulfide-selenide epitaxial films

A.V.

S.P.

2022

Optics and Spectroscopy

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Raman scattering spectra of 1-2 μm thick n-PbS(111) epitaxial films grown by molecular beam epitaxy on BaF2(111) substrates were obtained and analyzed. The spectra were recorded at a low excitation level of 0.36 mW/μm2, which did not cause photo- and thermal degradation of the films. It is shown that, in accordance with the symmetry selection rules, the bands in the spectra correspond to overtone or combination tones of phonon modes of PbS at special points of the Brillouin zone. The analysis of the bands of oxides and oxysulfates of lead, which can mask the bands of lead sulfide, was carried out. The obtained data were used in the analysis of the recorded Raman scattering spectra by epitaxial films of a ternary solid solution PbS0.5Se0.5. Keywords: Raman scattering, low excitation level, photooxidation, epitaxial films, lead sulfide, lead sulfide-selenide.

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Raman scattering in lead selenide films at a low excitation level

Cited by 10 publications

References 23 publications

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

Growth Study of New Complex Oxide PbO_xSe_1–x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy

Features of Raman scattering in lead sulfide and lead sulfide-selenide epitaxial films

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Raman scattering in lead selenide films at a low excitation level

Cited by 10 publications

References 23 publications

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

Temperature-Dependent Photoluminescent Properties of PbSe Nanoplatelets

Growth Study of New Complex Oxide PbOxSe1–x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy

Features of Raman scattering in lead sulfide and lead sulfide-selenide epitaxial films

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Growth Study of New Complex Oxide PbO_xSe_1–x Thin Films by Oxygen Plasma-Assisted Molecular Beam Epitaxy