Raman scattering in InAs nanowires synthesized by a solvothermal route

Xu, Xiangxing; Yu, Kehan; Wei, Wutao; Peng, Bo; Huang, S. H.; Chen, Z. H.; Shen, X. S.

doi:10.1063/1.2422897

Cited by 17 publications

(12 citation statements)

References 22 publications

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“…29,34,36 In NW geometries, the spatial confinement of free electron gases in the radial direction causes an additional contribution to the wave-vector nonconservation. 37 In order to simulate the experimental spectra, the contribution of the charge-density fluctuation (CDF) and the impurity-induced Fr€ ohlich (IIF) mechanisms were taken into account. The details of the lineshape calculations are given in Refs.…”

Section: Resultsmentioning

confidence: 99%

Si doping effects on (In,Ga)N nanowires

Kamimura

Ramsteiner

Geelhaar

et al. 2014

Journal of Applied Physics

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Si doped (In,Ga)N nanowires (In content up to 0.4) are grown on Si(111) substrates by plasmaassisted molecular beam epitaxy. By increasing the Si doping level, coalescence between nanowires is reduced and a more uniform morphology is obtained. The Raman spectra from highly doped samples show a characteristic broad band in the optical phonon frequency range, which became more prominent at higher doping levels. This Raman band can be explained by plasmonphonon scattering from a free electron gas with strong wave-vector nonconservation, providing evidence for successful n-type doping. The measured plasmon-phonon modes are explained by lineshape simulations taking into account the simultaneous contribution of both the charge-density fluctuation and the impurity induced Fr€ ohlich scattering mechanisms. The according lineshape analysis allows for an estimate of the carrier concentration. V C 2014 AIP Publishing LLC.

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Section: Resultsmentioning

confidence: 99%

Si doping effects on (In,Ga)N nanowires

Kamimura

Ramsteiner

Geelhaar

et al. 2014

Journal of Applied Physics

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“…[24] Similar standing-wave patterns are observed for a range of nanowires. [12,25] More interestingly, we find the diameter of nanowire provides a means to control the plasmonic properties such as the wavelength (Figure 2l electromagnetic modes guided by dielectric fibers, which show opposite changing trends. Our InAs nanowires are unintentionally doped during the fabrication process.…”

Section: Inas Plasmonsmentioning

confidence: 89%

Tunable Low Loss 1D Surface Plasmons in InAs Nanowires

et al. 2018

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Due to the ability to manipulate photons at nanoscale, plasmonics has become one of the most important branches in nanophotonics. The prerequisites for the technological application of plasmons include high confining ability (λ /λ ), low damping, and easy tunability. However, plasmons in typical plasmonic materials, i.e., noble metals, cannot satisfy these three requirements simultaneously and cause a disconnection to modern electronics. Here, the indium arsenide (InAs) nanowire is identified as a material that satisfies all the three prerequisites, providing a natural analogy with modern electronics. The dispersion relation of InAs plasmons is determined using the nanoinfrared imaging technique, and show that their associated wavelengths and damping ratio can be tuned by altering the nanowire diameter and dielectric environment. The InAs plasmons possess advantages such as high confining ability, low loss, and ease of fabrication. The observation of InAs plasmons could enable novel plasmonic circuits for future subwavelength applications.

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“…However, the interpretation of the Raman peaks and their relation to carrier density are often far from being straightforward. Indeed, LO modes can be screened by the free electron plasma from surface accumulation layers, in which case LPP modes cannot be observed unless the phonon wave‐vector uncertainty surpasses the Thomas–Fermi screening wave‐vector 33. In this case, the observation of LPP modes depends both on NW diameter and doping.…”

Section: Nanowire Ensemblesmentioning

confidence: 99%

“…Besides providing information about structural and crystallographic characteristics, electronic properties of nanowires can be accessed by inelastic scattering mediated by the coupling of phonons and plasmons 7, 8, 30–33, which are Raman active and have a frequency that shifts with carrier concentration. Details about the electronic band structure can as well be accessed under resonant conditions, by tuning the energy of the incoming or scattered light to the electronic transitions of the nanowire 34–38.…”

Section: Introductionmentioning

confidence: 99%

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires

Cros¹

2013

Physica Rapid Research Ltrs

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Raman spectroscopy is becoming a standard method for the non‐destructive characterization of nanowires and their heterostructures due to its ability to deliver information about size, structure, carrier concentration, local density, strain and orientation. Several phenomena related to vibrations and the anisotropic nature of nanowires have been reported. The so called “Raman antenna effect” leads to an increase of the scattering intensity that depends on nanowire size, orientation and excitation wavelength. Surface related vibrational modes have been proved to be sensitive to nanowire dimensions and their dielectric environment. Interface and confined modes characteristic of nanowire heterostructures have also been reported, together with low frequency modes that involve the vibration of the nanowire as a whole. Resonant inelastic light scattering has demonstrated its capability of providing information about the internal structure of individual nanowires and nanowire ensembles, increasing at the same time the Raman scattering efficiency. Furthermore, the coupling of the phonons with real electronic excitations gives access to band structure characteristics that cannot be accessed by other means. In this review we analyse the most recent advances concerning the vibrational properties of nanowire ensembles and single nanowires, paying special attention to their potential applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Raman scattering in InAs nanowires synthesized by a solvothermal route

Cited by 17 publications

References 22 publications

Si doping effects on (In,Ga)N nanowires

Si doping effects on (In,Ga)N nanowires

Tunable Low Loss 1D Surface Plasmons in InAs Nanowires

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires

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