Raman scattering in hydrogenated amorphous silicon under high pressure

Ishidate, Takeo; Inoue, Kuon; Tsuji, Kazuhiko; Minomura, Shigeru

doi:10.1016/0038-1098(82)91003-1

Cited by 95 publications

(32 citation statements)

References 12 publications

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“…However, the densification process appear to be more dominant than the disorder effect, as positive Raman shifts of the TO band were continuously recorded. The broadening and hardening of the TO band observed in this study are similar to observations reported for DAC experiments 8,27,28,55 and related simulation studies. 39,55 The Raman images in FIGs 4c to 4f show that the circular contact area between probe and sample increased steadily with greater loads.…”

Section: Resultssupporting

confidence: 91%

“…It was observed that the wavenumber of the LO bands shifted to higher values when exposed to increasing loads inside the contact region. Similar observations for this band have been reported in a DAC study 8 and related simulations. 39 In case of the LO band, both effects, volume reduction (densification) as well as an increase of the disorder induce Raman shifts towards higher wavenumbers.…”

Section: Resultssupporting

confidence: 90%

“…39 In case of the LO band, both effects, volume reduction (densification) as well as an increase of the disorder induce Raman shifts towards higher wavenumbers. 6,39 The position of the LA band remains mostly unchanged as also observed in the DAC study conducted by Ishidate et al 8 As mentioned earlier, a quantitative analysis of the TA band was not possible due to experimental restrictions. However, a qualitative assessment can be made from the comparison of the Raman spectra in FIGs 4a to 4f.…”

Section: Resultsmentioning

confidence: 68%

“…The broadening of the TO band was previously linked to an increase of local strain 4,13,18 due to increasing intrinsic changes in the short-range order. 8,11,19 Also, the relative Raman shift of the TO band became more pronounced as the band shifts continuously towards higher wavenumbers with further loading. As previously mentioned (see section III.D), the center peak position of the TO band may be influenced by densification processes (shifting towards higher wavenumbers) in addition to disorder effects (shifting towards lower wavenumbers) imposed in the a-Si.…”

Section: Resultsmentioning

confidence: 98%

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In situspectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

et al. 2015

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Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique. Quantitative analyses of the generated in situ Raman maps provide unique, new insight into the phase behavior of as-implanted a-Si. In particular, the occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were measured. The experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a sequence for the development of deformation of a-Si under indentation loading. The sequence involves three distinct deformation mechanisms of a-Si: (1) reversible deformation, (2) increase in coordination defects (onset of plastic deformation), and (3) phase transformation. Estimated conditions for the occurrence of these mechanisms are given with respect to relevant intrinsic and extrinsic parameters, such as indentation stress, volumetric strain, and bond angle distribution (a measure for the structural order of the amorphous network). The induced volumetric strains are accommodated solely by reversible deformation of the tetrahedral network when exposed to small indentation stresses. At greater indentation stresses, the increased volumetric strains in the tetrahedral network lead to the formation of predominately five-fold coordination defects, which seems to mark the onset of irreversible or plastic deformation of the a-Si thin film. Further increase in the indentation stress appears to initiate the formation of six-fold coordinated atomic arrangements. These six-fold coordinated arrangements may maintain their amorphous tetrahedral structure with a high density of coordination defects or nucleate as a new crystalline β-tin phase within the a-Si network.

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Section: Resultssupporting

confidence: 91%

Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 98%

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In situspectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

et al. 2015

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“…17 The film was dark brown in color when annealed at 400 • C-700 • C and turned yellow due to crystallization when annealed at 800 • C. Raman spectra of the Si films are shown in Figure 3. Peaks were observed at 460, 388, 302, and 150 cm 1 , which are peculiar to a-Si, when the sample was annealed at 400 • C-700 • C. 18,19 Only one peak of the sample that was annealed at 800 • C appeared at 515.3 cm 1 , and its full width at half maximum (FWHM) was 6.9 cm 1 . This Raman spectrum peak indicates that polycrystalline silicon (poly-Si) was formed.…”

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confidence: 99%

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

et al. 2018

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Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10−3Ω ⋅ cm, which is comparable to the specific resistance of flat n-type poly-Si films.

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Branched Hydrosilane Oligomers as Ideal Precursors for Liquid‐Based Silicon‐Film Deposition

et al. 2017

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Herein a convenient synthetic method to obtain 2,2,3,3‐tetrasilyltetrasilane 3 and 2,2,3,3,4,4‐hexasilylpentasilane 4 on a multigram scale is presented. Proton‐coupled 29Si NMR spectroscopy and single‐crystal X‐ray crystallography enabled unequivocal structural assignment. Owing to their unique properties, which are reflected in their nonpyrophoric character on contact with air and their enhanced light absorption above 250 nm, 3 and 4 are valuable precursors for liquid‐phase deposition (LPD) and the processing of thin silicon films. Amorphous silicon (a‐Si:H) films of excellent quality were deposited starting from 3 and characterized by conductivity measurements, ellipsometry, optical microscopy, and Raman spectroscopy.

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Raman scattering in hydrogenated amorphous silicon under high pressure

Cited by 95 publications

References 12 publications

In situspectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

In situspectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

Branched Hydrosilane Oligomers as Ideal Precursors for Liquid‐Based Silicon‐Film Deposition

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